Effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors

Bo Chieh Huang, Yow-Jon Lin

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors (OTFTs) was researched in this study. From the observed result, the relationship between electron trapping and electrical stability of OTFTs was discussed. It is shown that oxygen plasma treatment may lead to a shift of the threshold voltage towards positive gate-source voltages and an increase in the mobility, resulting from the incorporation of oxygen and the passivation of the defects in the grain-boundary region. It is found that the electrical stability mainly arises from the increased long-lifetime electron-trap density.

Original languageEnglish
Article number113301
JournalApplied Physics Letters
Volume99
Issue number11
DOIs
Publication statusPublished - 2011 Sep 12

Fingerprint

oxygen plasma
transistors
traps
thin films
electrons
threshold voltage
passivity
grain boundaries
trapping
life (durability)
shift
defects
electric potential
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors. / Huang, Bo Chieh; Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 99, No. 11, 113301, 12.09.2011.

Research output: Contribution to journalArticle

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