Abstract
The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.
Original language | English |
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Article number | 104904 |
Journal | Journal of Applied Physics |
Volume | 97 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2005 May 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)