Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN

Yow Jon Lin, Yow Lin Chu

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Abstract

The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.

Original languageEnglish
Article number104904
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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