Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN

Yow-Jon Lin, Yow Lin Chu

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.

Original languageEnglish
Article number104904
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

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etching
defects
ions
mass spectroscopy
nitrogen
x ray spectroscopy
Fermi surfaces
conduction bands
photoelectron spectroscopy
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.",
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Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN. / Lin, Yow-Jon; Chu, Yow Lin.

In: Journal of Applied Physics, Vol. 97, No. 10, 104904, 15.05.2005.

Research output: Contribution to journalArticle

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