Abstract
The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.
| Original language | English |
|---|---|
| Article number | 104904 |
| Journal | Journal of Applied Physics |
| Volume | 97 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 May 15 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN. / Lin, Yow-Jon; Chu, Yow Lin.
In: Journal of Applied Physics, Vol. 97, No. 10, 104904, 15.05.2005.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN
AU - Lin, Yow-Jon
AU - Chu, Yow Lin
PY - 2005/5/15
Y1 - 2005/5/15
N2 - The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.
AB - The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN (p-GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metaletched p-GaN interface, and an increase in the barrier height at the metaletched p-GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.
UR - http://www.scopus.com/inward/record.url?scp=20944432454&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20944432454&partnerID=8YFLogxK
U2 - 10.1063/1.1894580
DO - 10.1063/1.1894580
M3 - Article
AN - SCOPUS:20944432454
VL - 97
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
M1 - 104904
ER -