Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

Y. C. Lin; B. L. Wang; W. T. Yen; C. T. Ha; Chris Peng

doi:10.1016/j.tsf.2010.03.007

Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

Y. C. Lin, B. L. Wang, W. T. Yen, C. T. Ha, Chris Peng

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10^{- 4} Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

Original language	English
Pages (from-to)	4928-4934
Number of pages	7
Journal	Thin Solid Films
Volume	518
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2010.03.007
Publication status	Published - 2010 Jun 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering",

abstract = "The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.",

author = "Lin, {Y. C.} and Wang, {B. L.} and Yen, {W. T.} and Ha, {C. T.} and Chris Peng",

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T1 - Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

AU - Lin, Y. C.

AU - Wang, B. L.

AU - Yen, W. T.

AU - Ha, C. T.

AU - Peng, Chris

PY - 2010/6/30

Y1 - 2010/6/30

N2 - The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

AB - The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

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