Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

Y. C. Lin, B. L. Wang, W. T. Yen, C. T. Ha, Chris Peng

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

Original languageEnglish
Pages (from-to)4928-4934
Number of pages7
JournalThin Solid Films
Volume518
Issue number17
DOIs
Publication statusPublished - 2010 Jun 30

Fingerprint

Optoelectronic devices
Magnetron sputtering
magnetron sputtering
direct current
Optical band gaps
Thin films
Film thickness
film thickness
thin films
Substrates
Sputtering
crystallinity
Deposits
sputtering
deposits
Heating
Glass
microstructure
Microstructure
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80{\%} can be obtained using a Mo content of 1.77 wt.{\%}, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.",
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Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering. / Lin, Y. C.; Wang, B. L.; Yen, W. T.; Ha, C. T.; Peng, Chris.

In: Thin Solid Films, Vol. 518, No. 17, 30.06.2010, p. 4928-4934.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

AU - Lin, Y. C.

AU - Wang, B. L.

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AU - Ha, C. T.

AU - Peng, Chris

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AB - The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

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