Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

Y. C. Lin; B. L. Wang; W. T. Yen; C. T. Ha; Chris Peng

doi:10.1016/j.tsf.2010.03.007

Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

Y. C. Lin, B. L. Wang, W. T. Yen, C. T. Ha, Chris Peng

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

53 Citations (Scopus)

Abstract

The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10^{- 4} Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

Original language	English
Pages (from-to)	4928-4934
Number of pages	7
Journal	Thin Solid Films
Volume	518
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2010.03.007
Publication status	Published - 2010 Jun 30

Fingerprint

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Lin, Y. C., Wang, B. L., Yen, W. T., Ha, C. T., & Peng, C. (2010). Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering. Thin Solid Films, 518(17), 4928-4934. https://doi.org/10.1016/j.tsf.2010.03.007

@article{77bc6c18a1354a8aaf7a8a882acae799,

title = "Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering",

abstract = "The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80{\%} can be obtained using a Mo content of 1.77 wt.{\%}, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.",

author = "Lin, {Y. C.} and Wang, {B. L.} and Yen, {W. T.} and Ha, {C. T.} and Chris Peng",

year = "2010",

month = "6",

day = "30",

doi = "10.1016/j.tsf.2010.03.007",

language = "English",

volume = "518",

pages = "4928--4934",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "17",

}

TY - JOUR

T1 - Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

AU - Lin, Y. C.

AU - Wang, B. L.

AU - Yen, W. T.

AU - Ha, C. T.

AU - Peng, Chris

PY - 2010/6/30

Y1 - 2010/6/30

N2 - The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

AB - The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10- 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.

UR - http://www.scopus.com/inward/record.url?scp=77955663710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955663710&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.03.007

DO - 10.1016/j.tsf.2010.03.007

M3 - Article

AN - SCOPUS:77955663710

VL - 518

SP - 4928

EP - 4934

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 17

ER -

Access to Document

10.1016/j.tsf.2010.03.007