Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

W. T. Yen, Y. C. Lin, P. C. Yao, J. H. Ke, Y. L. Chen

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10- 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.

Original languageEnglish
Pages (from-to)3882-3885
Number of pages4
JournalThin Solid Films
Volume518
Issue number14
DOIs
Publication statusPublished - 2010 May 3

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering'. Together they form a unique fingerprint.

  • Cite this