Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

W. T. Yen, Y. C. Lin, P. C. Yao, J. H. Ke, Y. L. Chen

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10- 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.

Original languageEnglish
Pages (from-to)3882-3885
Number of pages4
JournalThin Solid Films
Volume518
Issue number14
DOIs
Publication statusPublished - 2010 May 3

Fingerprint

Optoelectronic devices
Magnetron sputtering
magnetron sputtering
direct current
Annealing
annealing
Optical band gaps
transmittance
Conductive films
Opacity
Carrier concentration
Structural properties
Electric properties
Optical properties
electrical properties
Infrared radiation
reflectance
optical properties
electrical resistivity
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering",
abstract = "In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10- 4 Ω cm. In addition, the film shows good optical transmittance of 88{\%} with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5{\%}, while the reflectivity at 2400 nm is as high as 70{\%}.",
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Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering. / Yen, W. T.; Lin, Y. C.; Yao, P. C.; Ke, J. H.; Chen, Y. L.

In: Thin Solid Films, Vol. 518, No. 14, 03.05.2010, p. 3882-3885.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

AU - Yen, W. T.

AU - Lin, Y. C.

AU - Yao, P. C.

AU - Ke, J. H.

AU - Chen, Y. L.

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AB - In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10- 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.

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