Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

Yen-Kuang Kuo, Syuan Huei Horng, Sheng Horng Yen, Miao Chan Tsai, Man-Fang Huang

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The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.

Original languageEnglish
Pages (from-to)509-515
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Issue number3
Publication statusPublished - 2010 Mar 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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