Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

Yen-Kuang Kuo; Syuan Huei Horng; Sheng Horng Yen; Miao Chan Tsai; Man-Fang Huang

doi:10.1007/s00339-009-5485-7

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

Yen-Kuang Kuo, Syuan Huei Horng, Sheng Horng Yen, Miao Chan Tsai, Man-Fang Huang

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.

Original language	English
Pages (from-to)	509-515
Number of pages	7
Journal	Applied Physics A: Materials Science and Processing
Volume	98
Issue number	3
DOIs	https://doi.org/10.1007/s00339-009-5485-7
Publication status	Published - 2010 Mar 1

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All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

Cite this

Kuo, Y-K., Horng, S. H., Yen, S. H., Tsai, M. C., & Huang, M-F. (2010). Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes. Applied Physics A: Materials Science and Processing, 98(3), 509-515. https://doi.org/10.1007/s00339-009-5485-7

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AB - The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.

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10.1007/s00339-009-5485-7