Abstract
The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
| Original language | English |
|---|---|
| Pages (from-to) | 509-515 |
| Number of pages | 7 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 98 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes. / Kuo, Yen-Kuang; Horng, Syuan Huei; Yen, Sheng Horng; Tsai, Miao Chan; Huang, Man-Fang.
In: Applied Physics A: Materials Science and Processing, Vol. 98, No. 3, 01.03.2010, p. 509-515.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes
AU - Kuo, Yen-Kuang
AU - Horng, Syuan Huei
AU - Yen, Sheng Horng
AU - Tsai, Miao Chan
AU - Huang, Man-Fang
PY - 2010/3/1
Y1 - 2010/3/1
N2 - The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
AB - The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
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UR - http://www.scopus.com/inward/citedby.url?scp=76749116978&partnerID=8YFLogxK
U2 - 10.1007/s00339-009-5485-7
DO - 10.1007/s00339-009-5485-7
M3 - Article
AN - SCOPUS:76749116978
VL - 98
SP - 509
EP - 515
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
ER -