Abstract
The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
| Original language | English |
|---|---|
| Pages (from-to) | 509-515 |
| Number of pages | 7 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 98 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Mar 1 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Kuo, Y-K., Horng, S. H., Yen, S. H., Tsai, M. C., & Huang, M-F. (2010). Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes. Applied Physics A: Materials Science and Processing, 98(3), 509-515. https://doi.org/10.1007/s00339-009-5485-7