Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes

Yen Kuang Kuo; Miao Chan Tsai; Sheng Horng Yen; Ta Cheng Hsu; Yu Jiun Shen

doi:10.1109/JQE.2010.2045104

Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes

Yen Kuang Kuo, Miao Chan Tsai, Sheng Horng Yen, Ta Cheng Hsu, Yu Jiun Shen

Department of Physics

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.

Original language	English
Article number	31
Pages (from-to)	1214-1220
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	46
Issue number	8
DOIs	https://doi.org/10.1109/JQE.2010.2045104
Publication status	Published - 2010 May 3

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes",

abstract = "P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.",

author = "Kuo, {Yen Kuang} and Tsai, {Miao Chan} and Yen, {Sheng Horng} and Hsu, {Ta Cheng} and Shen, {Yu Jiun}",

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AU - Kuo, Yen Kuang

AU - Tsai, Miao Chan

AU - Yen, Sheng Horng

AU - Hsu, Ta Cheng

AU - Shen, Yu Jiun

PY - 2010/5/3

Y1 - 2010/5/3

N2 - P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.

AB - P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.

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