@article{bf0cfa93fc4944d5958baf425007ab76,
title = "Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes",
abstract = "P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.",
author = "Kuo, {Yen Kuang} and Tsai, {Miao Chan} and Yen, {Sheng Horng} and Hsu, {Ta Cheng} and Shen, {Yu Jiun}",
note = "Funding Information: Manuscript received July 09, 2009; revised January 07, 2010. Current version published April 16, 2010. This work was supported in part by the National Science Council (NSC) of Taiwan under Grant NSC 96-2112-M-018-007-MY3. Y.-K. Kuo is with the Department of Physics, National Changhua University of Education, Changhua, Taiwan (e-mail: ykuo@cc.ncue.edu.tw). M.-C. Tsai is with the Institute of Photonics, National Changhua University of Education, Changhua, Taiwan (e-mail: meowtsan@gmail.com). S.-H. Yen, T.-C. Hsu and Y.-J. Shen are with the R&D Division, Epistar Co., Ltd., Science-Based Industrial Park, Hsinchu, Taiwan (e-mail: sh_yen@epistar. com.tw; tchsu@epistar.com.tw; yjshen@epistar.com.tw). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JQE.2010.2045104 Fig. 1. Schematic diagram of InGaN/GaN active region: (a) original structure, (b) structure with p-doping in the last barrier, and (c) structure with partial p-doping in two-thirds of the last barrier.",
year = "2010",
doi = "10.1109/JQE.2010.2045104",
language = "English",
volume = "46",
pages = "1214--1220",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}