Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

Yen-Kuang Kuo, Syuan Huei Horng, Miao Chan Tsai, Sheng Horng Yen, Shu-Hsuan Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380-408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.

Original languageEnglish
Pages (from-to)3698-3702
Number of pages5
JournalOptics Communications
Volume283
Issue number19
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Semiconductor lasers
semiconductor lasers
Polarization
polarization
threshold currents
Semiconductor quantum wells
quantum wells
Quantum well lasers
Lasers
quantum well lasers
Leakage currents
lasers
leakage
Electrons
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes",
abstract = "The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380-408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.",
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language = "English",
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Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes. / Kuo, Yen-Kuang; Horng, Syuan Huei; Tsai, Miao Chan; Yen, Sheng Horng; Chang, Shu-Hsuan.

In: Optics Communications, Vol. 283, No. 19, 01.10.2010, p. 3698-3702.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

AU - Kuo, Yen-Kuang

AU - Horng, Syuan Huei

AU - Tsai, Miao Chan

AU - Yen, Sheng Horng

AU - Chang, Shu-Hsuan

PY - 2010/10/1

Y1 - 2010/10/1

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AB - The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380-408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.

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