Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process

Yi-Cheng or Y. C. Lin; J. H. Ke; C. C. Chen

doi:10.4028/www.scientific.net/AMM.189.63

Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process

Yi-Cheng or Y. C. Lin, J. H. Ke, C. C. Chen

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this study, Cu(In,Ga)Se₂ (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm² (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

Original language	English
Title of host publication	Frontier in Information Engineering for Mechanics and Materials
Pages	63-68
Number of pages	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.189.63
Publication status	Published - 2012 Oct 11
Event	2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012 - Hangzhou, China Duration: 2012 May 19 → 2012 May 22

Publication series

Name	Applied Mechanics and Materials
Volume	189
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Other

Other	2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012
Country	China
City	Hangzhou
Period	12-05-19 → 12-05-22

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All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Lin, Y-C. O. Y. C., Ke, J. H., & Chen, C. C. (2012). Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process. In Frontier in Information Engineering for Mechanics and Materials (pp. 63-68). (Applied Mechanics and Materials; Vol. 189). https://doi.org/10.4028/www.scientific.net/AMM.189.63

@inproceedings{2d00b622954240798b2bacc2d1f9628d,

title = "Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process",

abstract = "In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.",

author = "Lin, {Yi-Cheng or Y. C.} and Ke, {J. H.} and Chen, {C. C.}",

year = "2012",

month = "10",

day = "11",

doi = "10.4028/www.scientific.net/AMM.189.63",

language = "English",

isbn = "9783037854594",

series = "Applied Mechanics and Materials",

pages = "63--68",

booktitle = "Frontier in Information Engineering for Mechanics and Materials",

note = "2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012 ; Conference date: 19-05-2012 Through 22-05-2012",

}

Lin, Y-COYC, Ke, JH & Chen, CC 2012, Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process. in Frontier in Information Engineering for Mechanics and Materials. Applied Mechanics and Materials, vol. 189, pp. 63-68, 2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012, Hangzhou, China, 12-05-19. https://doi.org/10.4028/www.scientific.net/AMM.189.63

Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process. / Lin, Yi-Cheng or Y. C.; Ke, J. H.; Chen, C. C.

Frontier in Information Engineering for Mechanics and Materials. 2012. p. 63-68 (Applied Mechanics and Materials; Vol. 189).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process

AU - Lin, Yi-Cheng or Y. C.

AU - Ke, J. H.

AU - Chen, C. C.

PY - 2012/10/11

Y1 - 2012/10/11

N2 - In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

AB - In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

UR - http://www.scopus.com/inward/record.url?scp=84867144885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867144885&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMM.189.63

DO - 10.4028/www.scientific.net/AMM.189.63

M3 - Conference contribution

AN - SCOPUS:84867144885

SN - 9783037854594

T3 - Applied Mechanics and Materials

SP - 63

EP - 68

BT - Frontier in Information Engineering for Mechanics and Materials

T2 - 2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012

Y2 - 19 May 2012 through 22 May 2012

ER -

Access to Document

10.4028/www.scientific.net/AMM.189.63