Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process

Y. C. Lin; J. H. Ke; C. C. Chen

doi:10.4028/www.scientific.net/AMM.189.63

Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process

Y. C. Lin, J. H. Ke, C. C. Chen

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this study, Cu(In,Ga)Se₂ (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm² (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

Original language	English
Title of host publication	Frontier in Information Engineering for Mechanics and Materials
Pages	63-68
Number of pages	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.189.63
Publication status	Published - 2012
Event	2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012 - Hangzhou, China Duration: 2012 May 19 → 2012 May 22

Publication series

Name	Applied Mechanics and Materials
Volume	189
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Other

Other	2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012
Country	China
City	Hangzhou
Period	12-05-19 → 12-05-22

All Science Journal Classification (ASJC) codes

Engineering(all)

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@inproceedings{2d00b622954240798b2bacc2d1f9628d,

title = "Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process",

abstract = "In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.",

author = "Lin, {Y. C.} and Ke, {J. H.} and Chen, {C. C.}",

note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012 ; Conference date: 19-05-2012 Through 22-05-2012",

year = "2012",

doi = "10.4028/www.scientific.net/AMM.189.63",

language = "English",

isbn = "9783037854594",

series = "Applied Mechanics and Materials",

pages = "63--68",

booktitle = "Frontier in Information Engineering for Mechanics and Materials",

}

Lin, YC, Ke, JH & Chen, CC 2012, Effect of deposition conditions on the characterization of Cu(In,Ga)Se₂ precursor films by sputtering process. in Frontier in Information Engineering for Mechanics and Materials. Applied Mechanics and Materials, vol. 189, pp. 63-68, 2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012, Hangzhou, China, 12-05-19. https://doi.org/10.4028/www.scientific.net/AMM.189.63

TY - GEN

T1 - Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process

AU - Lin, Y. C.

AU - Ke, J. H.

AU - Chen, C. C.

PY - 2012

Y1 - 2012

N2 - In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

AB - In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

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SN - 9783037854594

T3 - Applied Mechanics and Materials

SP - 63

EP - 68

BT - Frontier in Information Engineering for Mechanics and Materials

T2 - 2012 International Conference on Information Engineering for Mechanics and Materials, ICIMM 2012

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