Abstract
The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated. We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 × 10 -4 Ω cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was 3.62 × 10 -3 Ω cm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching.
| Original language | English |
|---|---|
| Pages (from-to) | 3629-3634 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 255 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
}
Effect of Cr and V dopants on the chemical stability of AZO thin film. / Lin, Yi-Cheng or Y. C.; Jiang, J. H.; Yen, W. T.
In: Applied Surface Science, Vol. 255, No. 6, 01.01.2009, p. 3629-3634.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of Cr and V dopants on the chemical stability of AZO thin film
AU - Lin, Yi-Cheng or Y. C.
AU - Jiang, J. H.
AU - Yen, W. T.
PY - 2009/1/1
Y1 - 2009/1/1
N2 - The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated. We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 × 10 -4 Ω cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was 3.62 × 10 -3 Ω cm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching.
AB - The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated. We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 × 10 -4 Ω cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was 3.62 × 10 -3 Ω cm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching.
UR - http://www.scopus.com/inward/record.url?scp=57849083866&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57849083866&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2008.10.019
DO - 10.1016/j.apsusc.2008.10.019
M3 - Article
AN - SCOPUS:57849083866
VL - 255
SP - 3629
EP - 3634
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 6
ER -