Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction

Qian Sun, Tsung Shine Ko, Christopher D. Yerino, Yu Zhang, In Hwan Lee, Jung Han, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

This paper reports the effect of controlled growth dynamics, as monitored by in situ optical reflectance, on the microstructure of nonpolar aplane GaN films grown on r-plane sapphire. The mosaic microstructure of a-plane GaN and its anisotropy are evaluated by X-ray rocking curve (XRC) measurements. By inserting a pronounced islanding stage followed by an enhanced lateral growth, pit-free a-plane GaN has been achieved showing an XRC linewidth of -0:18 and -0:3° for on- and off-axes planes, respectively, with only minor anisotropy. The density of basal-plane stacking faults is reduced by -70% as determined by a modified Williamson-Hall X-ray analysis.

Original languageEnglish
Article number071002
JournalJapanese Journal of Applied Physics
Volume48
Issue number7 PART 1
DOIs
Publication statusPublished - 2009 Jul 1

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Anisotropy
X ray diffraction
X rays
microstructure
Microstructure
X ray analysis
Stacking faults
diffraction
Sapphire
Linewidth
anisotropy
x rays
curves
crystal defects
sapphire
reflectance

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sun, Qian ; Ko, Tsung Shine ; Yerino, Christopher D. ; Zhang, Yu ; Lee, In Hwan ; Han, Jung ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 7 PART 1.
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abstract = "This paper reports the effect of controlled growth dynamics, as monitored by in situ optical reflectance, on the microstructure of nonpolar aplane GaN films grown on r-plane sapphire. The mosaic microstructure of a-plane GaN and its anisotropy are evaluated by X-ray rocking curve (XRC) measurements. By inserting a pronounced islanding stage followed by an enhanced lateral growth, pit-free a-plane GaN has been achieved showing an XRC linewidth of -0:18 and -0:3° for on- and off-axes planes, respectively, with only minor anisotropy. The density of basal-plane stacking faults is reduced by -70{\%} as determined by a modified Williamson-Hall X-ray analysis.",
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Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction. / Sun, Qian; Ko, Tsung Shine; Yerino, Christopher D.; Zhang, Yu; Lee, In Hwan; Han, Jung; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

In: Japanese Journal of Applied Physics, Vol. 48, No. 7 PART 1, 071002, 01.07.2009.

Research output: Contribution to journalArticle

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