Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors

Ming Tzu Chung, Zhong En Tsay, Ming Han Chi, Yu-Wu Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.

Original languageEnglish
Pages (from-to)441-447
Number of pages7
JournalThin Solid Films
Volume638
DOIs
Publication statusPublished - 2017 Sep 30

Fingerprint

Thin film transistors
Polymers
Transistors
transistors
insulators
polymers
thin films
Polymethyl methacrylates
polymethyl methacrylate
Leakage currents
phenols
Phenols
Polymethyl Methacrylate
Phenol
leakage
thresholds
Molecular orientation
polymer blends
Electric potential
Polymer blends

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.",
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Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors. / Chung, Ming Tzu; Tsay, Zhong En; Chi, Ming Han; Wang, Yu-Wu.

In: Thin Solid Films, Vol. 638, 30.09.2017, p. 441-447.

Research output: Contribution to journalArticle

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