Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors

Ming Tzu Chung; Zhong En Tsay; Ming Han Chi; Yu Wu Wang

doi:10.1016/j.tsf.2017.07.075

Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors

Ming Tzu Chung, Zhong En Tsay, Ming Han Chi, Yu Wu Wang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 10⁴, lower leakage current of < 10^{− 11} A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10^{− 3} cm²/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al₂O₃/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.

Original language	English
Pages (from-to)	441-447
Number of pages	7
Journal	Thin Solid Films
Volume	638
DOIs	https://doi.org/10.1016/j.tsf.2017.07.075
Publication status	Published - 2017 Sep 30

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Chung, M. T., Tsay, Z. E., Chi, M. H., & Wang, Y. W. (2017). Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors. Thin Solid Films, 638, 441-447. https://doi.org/10.1016/j.tsf.2017.07.075

@article{b05228d9c9034a2e804e98c54b27fbff,

title = "Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors",

abstract = "This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.",

author = "Chung, {Ming Tzu} and Tsay, {Zhong En} and Chi, {Ming Han} and Wang, {Yu Wu}",

year = "2017",

month = sep

day = "30",

doi = "10.1016/j.tsf.2017.07.075",

language = "English",

volume = "638",

pages = "441--447",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors

AU - Chung, Ming Tzu

AU - Tsay, Zhong En

AU - Chi, Ming Han

AU - Wang, Yu Wu

PY - 2017/9/30

Y1 - 2017/9/30

N2 - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.

AB - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.

UR - http://www.scopus.com/inward/record.url?scp=85027889127&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027889127&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2017.07.075

DO - 10.1016/j.tsf.2017.07.075

M3 - Article

AN - SCOPUS:85027889127

VL - 638

SP - 441

EP - 447

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

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10.1016/j.tsf.2017.07.075