TY - JOUR
T1 - Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors
AU - Chung, Ming Tzu
AU - Tsay, Zhong En
AU - Chi, Ming Han
AU - Wang, Yu Wu
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, through Grant No. 104-2221-E-018-020. The authors thank the Department of Physics, National Changhua University of Education, Taiwan for providing the equipment and for their cooperation.
Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan , through Grant No. 104-2221-E-018-020 . The authors thank the Department of Physics, National Changhua University of Education, Taiwan for providing the equipment and for their cooperation.
PY - 2017/9/30
Y1 - 2017/9/30
N2 - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
AB - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
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U2 - 10.1016/j.tsf.2017.07.075
DO - 10.1016/j.tsf.2017.07.075
M3 - Article
AN - SCOPUS:85027889127
VL - 638
SP - 441
EP - 447
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -