Abstract
This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
| Original language | English |
|---|---|
| Pages (from-to) | 441-447 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 638 |
| DOIs | |
| Publication status | Published - 2017 Sep 30 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors. / Chung, Ming Tzu; Tsay, Zhong En; Chi, Ming Han; Wang, Yu-Wu.
In: Thin Solid Films, Vol. 638, 30.09.2017, p. 441-447.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of blending polymer insulators on the improvement of the performance of poly(3-hexylthiophene) transistors
AU - Chung, Ming Tzu
AU - Tsay, Zhong En
AU - Chi, Ming Han
AU - Wang, Yu-Wu
PY - 2017/9/30
Y1 - 2017/9/30
N2 - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
AB - This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
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U2 - 10.1016/j.tsf.2017.07.075
DO - 10.1016/j.tsf.2017.07.075
M3 - Article
VL - 638
SP - 441
EP - 447
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -