Abstract
The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In xGa1-xN/InyGa1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 395-402 |
| Number of pages | 8 |
| Journal | Optics Communications |
| Volume | 231 |
| Issue number | 1-6 |
| DOIs | |
| Publication status | Published - 2004 Feb 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
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Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics. / Kuo, Yen Kuang; Liou, Bo Ting; Chen, Mei Ling; Yen, Sheng Horng; Lin, Cheng Yang.
In: Optics Communications, Vol. 231, No. 1-6, 15.02.2004, p. 395-402.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics
AU - Kuo, Yen Kuang
AU - Liou, Bo Ting
AU - Chen, Mei Ling
AU - Yen, Sheng Horng
AU - Lin, Cheng Yang
PY - 2004/2/15
Y1 - 2004/2/15
N2 - The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In xGa1-xN/InyGa1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.
AB - The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In xGa1-xN/InyGa1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.
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U2 - 10.1016/j.optcom.2003.12.028
DO - 10.1016/j.optcom.2003.12.028
M3 - Article
AN - SCOPUS:0942267832
VL - 231
SP - 395
EP - 402
JO - Optics Communications
JF - Optics Communications
SN - 0030-4018
IS - 1-6
ER -