Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics

Yen Kuang Kuo; Bo Ting Liou; Mei Ling Chen; Sheng Horng Yen; Cheng Yang Lin

doi:10.1016/j.optcom.2003.12.028

Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics

Yen Kuang Kuo, Bo Ting Liou, Mei Ling Chen, Sheng Horng Yen, Cheng Yang Lin

Department of Physics

Research output: Contribution to journal › Article

25 Citations (Scopus)

Abstract

The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In _xGa_1-xN/In_yGa_1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.

Original language	English
Pages (from-to)	395-402
Number of pages	8
Journal	Optics Communications
Volume	231
Issue number	1-6
DOIs	https://doi.org/10.1016/j.optcom.2003.12.028
Publication status	Published - 2004 Feb 15

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Liou, B. T., Chen, M. L., Yen, S. H., & Lin, C. Y. (2004). Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics. Optics Communications, 231(1-6), 395-402. https://doi.org/10.1016/j.optcom.2003.12.028

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abstract = "The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In xGa1-xN/InyGa1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.",

author = "Kuo, {Yen Kuang} and Liou, {Bo Ting} and Chen, {Mei Ling} and Yen, {Sheng Horng} and Lin, {Cheng Yang}",

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AU - Kuo, Yen Kuang

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AU - Chen, Mei Ling

AU - Yen, Sheng Horng

AU - Lin, Cheng Yang

PY - 2004/2/15

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AB - The characteristics of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm when the band-offset ratio of the In xGa1-xN/InyGa1-yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm.

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10.1016/j.optcom.2003.12.028