Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties

Alexey N. Mihalyuk, Leonid V. Bondarenko, Alexandra Y. Tupchaya, Dimitry V. Gruznev, Jyh-pin Chou, Cheng-rong Hsing, Ching-ming Wei, Andrey V. Zotov, Alexander A. Saranin

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)17-22
JournalSurface Science
Volume668
DOIs
Publication statusPublished - 2018 Feb 1

Cite this

Mihalyuk, A. N., Bondarenko, L. V., Tupchaya, A. Y., Gruznev, D. V., Chou, J., Hsing, C., Wei, C., Zotov, A. V., & Saranin, A. A. (2018). Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties. Surface Science, 668, 17-22. https://doi.org/10.1016/j.susc.2017.10.010