Doping with Nb enhances the photoresponsivity of WSe2 thin sheets

Der-Yuh Lin, Jhih Jhong Jheng, Tsung-Shine Ko, Hung Pin Hsu, Chia Feng Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density-voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.

Original languageEnglish
Article number055011
JournalAIP Advances
Volume8
Issue number5
DOIs
Publication statusPublished - 2018 May 1

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niobium
atoms
photoelectronics
photoconductivity
photometers
Hall effect
tungsten
photoelectron spectroscopy
vapors
current density
fabrication
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Der-Yuh ; Jheng, Jhih Jhong ; Ko, Tsung-Shine ; Hsu, Hung Pin ; Lin, Chia Feng. / Doping with Nb enhances the photoresponsivity of WSe2 thin sheets. In: AIP Advances. 2018 ; Vol. 8, No. 5.
@article{d0ced9542b824d04811f0de4bd30f1fa,
title = "Doping with Nb enhances the photoresponsivity of WSe2 thin sheets",
abstract = "In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density-voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.",
author = "Der-Yuh Lin and Jheng, {Jhih Jhong} and Tsung-Shine Ko and Hsu, {Hung Pin} and Lin, {Chia Feng}",
year = "2018",
month = "5",
day = "1",
doi = "10.1063/1.5024570",
language = "English",
volume = "8",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Doping with Nb enhances the photoresponsivity of WSe2 thin sheets. / Lin, Der-Yuh; Jheng, Jhih Jhong; Ko, Tsung-Shine; Hsu, Hung Pin; Lin, Chia Feng.

In: AIP Advances, Vol. 8, No. 5, 055011, 01.05.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Doping with Nb enhances the photoresponsivity of WSe2 thin sheets

AU - Lin, Der-Yuh

AU - Jheng, Jhih Jhong

AU - Ko, Tsung-Shine

AU - Hsu, Hung Pin

AU - Lin, Chia Feng

PY - 2018/5/1

Y1 - 2018/5/1

N2 - In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density-voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.

AB - In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density-voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.

UR - http://www.scopus.com/inward/record.url?scp=85047149270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047149270&partnerID=8YFLogxK

U2 - 10.1063/1.5024570

DO - 10.1063/1.5024570

M3 - Article

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 5

M1 - 055011

ER -