Abstract
Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS 2 ) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS 2 , as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS 2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of μ3 × 10 19 cm -3 . Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS 2 by replacing the Mo cations in the host lattice. van der Waals p-n homojunctions based on vertically stacked MoS 2 layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS 2 . From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.
| Original language | English |
|---|---|
| Pages (from-to) | 6976-6982 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 14 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2014 Dec 10 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
Cite this
}
Doping against the native propensity of MoS 2 : Degenerate hole doping by cation substitution. / Suh, Joonki; Park, Tae Eon; Lin, Der-Yuh; Fu, Deyi; Park, Joonsuk; Jung, Hee Joon; Chen, Yabin; Ko, Changhyun; Jang, Chaun; Sun, Yinghui; Sinclair, Robert; Chang, Joonyeon; Tongay, Sefaattin; Wu, Junqiao.
In: Nano Letters, Vol. 14, No. 12, 10.12.2014, p. 6976-6982.Research output: Contribution to journal › Article
TY - JOUR
T1 - Doping against the native propensity of MoS 2
T2 - Degenerate hole doping by cation substitution
AU - Suh, Joonki
AU - Park, Tae Eon
AU - Lin, Der-Yuh
AU - Fu, Deyi
AU - Park, Joonsuk
AU - Jung, Hee Joon
AU - Chen, Yabin
AU - Ko, Changhyun
AU - Jang, Chaun
AU - Sun, Yinghui
AU - Sinclair, Robert
AU - Chang, Joonyeon
AU - Tongay, Sefaattin
AU - Wu, Junqiao
PY - 2014/12/10
Y1 - 2014/12/10
N2 - Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS 2 ) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS 2 , as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS 2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of μ3 × 10 19 cm -3 . Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS 2 by replacing the Mo cations in the host lattice. van der Waals p-n homojunctions based on vertically stacked MoS 2 layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS 2 . From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.
AB - Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS 2 ) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS 2 , as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS 2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of μ3 × 10 19 cm -3 . Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS 2 by replacing the Mo cations in the host lattice. van der Waals p-n homojunctions based on vertically stacked MoS 2 layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS 2 . From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.
UR - http://www.scopus.com/inward/record.url?scp=84916608164&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84916608164&partnerID=8YFLogxK
U2 - 10.1021/nl503251h
DO - 10.1021/nl503251h
M3 - Article
AN - SCOPUS:84916608164
VL - 14
SP - 6976
EP - 6982
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 12
ER -