Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates

Hou Guang Chen, Tsung-Shine Ko, Shih Chun Ling, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Yue Han Wu, Li Chang

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1 1- 02) r -plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 2- 0] with two etched sides in {0001} and {1 1- 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 1- 02)sapphire ∥ (11 2- 0)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, and (0001)sapphire ∥ (0001)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of ∼ 107 cm-2 can be achieved in the tilted GaN.

Original languageEnglish
Article number021914
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007 Aug 1

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sapphire
mesas
epitaxy
metalorganic chemical vapor deposition
flat surfaces
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, H. G., Ko, T-S., Ling, S. C., Lu, T. C., Kuo, H. C., Wang, S. C., ... Chang, L. (2007). Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates. Applied Physics Letters, 91(2), [021914]. https://doi.org/10.1063/1.2754643
Chen, Hou Guang ; Ko, Tsung-Shine ; Ling, Shih Chun ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung ; Wu, Yue Han ; Chang, Li. / Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates. In: Applied Physics Letters. 2007 ; Vol. 91, No. 2.
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Chen, HG, Ko, T-S, Ling, SC, Lu, TC, Kuo, HC, Wang, SC, Wu, YH & Chang, L 2007, 'Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates', Applied Physics Letters, vol. 91, no. 2, 021914. https://doi.org/10.1063/1.2754643

Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates. / Chen, Hou Guang; Ko, Tsung-Shine; Ling, Shih Chun; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Wu, Yue Han; Chang, Li.

In: Applied Physics Letters, Vol. 91, No. 2, 021914, 01.08.2007.

Research output: Contribution to journalArticle

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N2 - Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1 1- 02) r -plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 2- 0] with two etched sides in {0001} and {1 1- 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 1- 02)sapphire ∥ (11 2- 0)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, and (0001)sapphire ∥ (0001)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of ∼ 107 cm-2 can be achieved in the tilted GaN.

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