Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates

Hou Guang Chen, Tsung Shine Ko, Shih Chun Ling, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Yue Han Wu, Li Chang

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Abstract

Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1 1- 02) r -plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 2- 0] with two etched sides in {0001} and {1 1- 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 1- 02)sapphire ∥ (11 2- 0)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, and (0001)sapphire ∥ (0001)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of ∼ 107 cm-2 can be achieved in the tilted GaN.

Original languageEnglish
Article number021914
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007 Aug 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, H. G., Ko, T. S., Ling, S. C., Lu, T. C., Kuo, H. C., Wang, S. C., ... Chang, L. (2007). Dislocation reduction in GaN grown on stripe patterned r -plane sapphire substrates. Applied Physics Letters, 91(2), [021914]. https://doi.org/10.1063/1.2754643