Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

Jia Mou Lee; Dong Chin Yang; Ching Ming Lee; Lin Xiu Ye; Yao Jen Chang; Yen Chi Lee; Jong-Ching Wu; Te Ho Wu

doi:10.1088/0022-3727/46/17/175002

Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

Jia Mou Lee, Dong Chin Yang, Ching Ming Lee, Lin Xiu Ye, Yao Jen Chang, Yen Chi Lee, Jong-Ching Wu, Te Ho Wu

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm². The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm ^-2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

Original language	English
Article number	175002
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	17
DOIs	https://doi.org/10.1088/0022-3727/46/17/175002
Publication status	Published - 2013 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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title = "Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope",

abstract = "We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.",

author = "Lee, {Jia Mou} and Yang, {Dong Chin} and Lee, {Ching Ming} and Ye, {Lin Xiu} and Chang, {Yao Jen} and Lee, {Yen Chi} and Jong-Ching Wu and Wu, {Te Ho}",

year = "2013",

month = may,

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doi = "10.1088/0022-3727/46/17/175002",

language = "English",

volume = "46",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "17",

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Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. / Lee, Jia Mou; Yang, Dong Chin; Lee, Ching Ming; Ye, Lin Xiu; Chang, Yao Jen; Lee, Yen Chi; Wu, Jong-Ching; Wu, Te Ho.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 17, 175002, 01.05.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

AU - Lee, Jia Mou

AU - Yang, Dong Chin

AU - Lee, Ching Ming

AU - Ye, Lin Xiu

AU - Chang, Yao Jen

AU - Lee, Yen Chi

AU - Wu, Jong-Ching

AU - Wu, Te Ho

PY - 2013/5/1

Y1 - 2013/5/1

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AB - We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

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