Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

Jia Mou Lee, Dong Chin Yang, Ching Ming Lee, Lin Xiu Ye, Yao Jen Chang, Yen Chi Lee, Jong-Ching Wu, Te Ho Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

Original languageEnglish
Article number175002
JournalJournal of Physics D: Applied Physics
Volume46
Issue number17
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Magnetic scales
Tunnel junctions
tunnel junctions
Microscopes
microscopes
Magnetic devices
Electric current measurement
Magnetoresistance
Sputtering
Magnetization
pulse duration
Current density
sputtering
Chemical activation
atomic force microscopy
activation
current density
magnetization
probes
cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lee, Jia Mou ; Yang, Dong Chin ; Lee, Ching Ming ; Ye, Lin Xiu ; Chang, Yao Jen ; Lee, Yen Chi ; Wu, Jong-Ching ; Wu, Te Ho. / Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. In: Journal of Physics D: Applied Physics. 2013 ; Vol. 46, No. 17.
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Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. / Lee, Jia Mou; Yang, Dong Chin; Lee, Ching Ming; Ye, Lin Xiu; Chang, Yao Jen; Lee, Yen Chi; Wu, Jong-Ching; Wu, Te Ho.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 17, 175002, 01.05.2013.

Research output: Contribution to journalArticle

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AU - Lee, Yen Chi

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AB - We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

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