Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

Jia Mou Lee; Dong Chin Yang; Ching Ming Lee; Lin Xiu Ye; Yao Jen Chang; Yen Chi Lee; Jong-Ching Wu; Te Ho Wu

doi:10.1088/0022-3727/46/17/175002

Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

Jia Mou Lee, Dong Chin Yang, Ching Ming Lee, Lin Xiu Ye, Yao Jen Chang, Yen Chi Lee, Jong-Ching Wu, Te Ho Wu

Department of Physics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm². The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm ^-2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

Original language	English
Article number	175002
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	17
DOIs	https://doi.org/10.1088/0022-3727/46/17/175002
Publication status	Published - 2013 May 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Cite this

Lee, J. M., Yang, D. C., Lee, C. M., Ye, L. X., Chang, Y. J., Lee, Y. C., Wu, J-C., & Wu, T. H. (2013). Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. Journal of Physics D: Applied Physics, 46(17), [175002]. https://doi.org/10.1088/0022-3727/46/17/175002

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abstract = "We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.",

author = "Lee, {Jia Mou} and Yang, {Dong Chin} and Lee, {Ching Ming} and Ye, {Lin Xiu} and Chang, {Yao Jen} and Lee, {Yen Chi} and Jong-Ching Wu and Wu, {Te Ho}",

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Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. / Lee, Jia Mou; Yang, Dong Chin; Lee, Ching Ming; Ye, Lin Xiu; Chang, Yao Jen; Lee, Yen Chi; Wu, Jong-Ching; Wu, Te Ho.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 17, 175002, 01.05.2013.

Research output: Contribution to journal › Article

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AU - Lee, Jia Mou

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AU - Lee, Ching Ming

AU - Ye, Lin Xiu

AU - Chang, Yao Jen

AU - Lee, Yen Chi

AU - Wu, Jong-Ching

AU - Wu, Te Ho

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AB - We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

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10.1088/0022-3727/46/17/175002