Abstract
We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.
| Original language | English |
|---|---|
| Article number | 175002 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 46 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2013 May 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope. / Lee, Jia Mou; Yang, Dong Chin; Lee, Ching Ming; Ye, Lin Xiu; Chang, Yao Jen; Lee, Yen Chi; Wu, Jong-Ching; Wu, Te Ho.
In: Journal of Physics D: Applied Physics, Vol. 46, No. 17, 175002, 01.05.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope
AU - Lee, Jia Mou
AU - Yang, Dong Chin
AU - Lee, Ching Ming
AU - Ye, Lin Xiu
AU - Chang, Yao Jen
AU - Lee, Yen Chi
AU - Wu, Jong-Ching
AU - Wu, Te Ho
PY - 2013/5/1
Y1 - 2013/5/1
N2 - We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.
AB - We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm2. The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm -2. This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.
UR - http://www.scopus.com/inward/record.url?scp=84876500886&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876500886&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/46/17/175002
DO - 10.1088/0022-3727/46/17/175002
M3 - Article
AN - SCOPUS:84876500886
VL - 46
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 17
M1 - 175002
ER -