Abstract
Here, we report an investigation of magnetic domain wall (DW) evolution and propagation in Y-shaped permalloy (Py) nanowire (NW) devices. The devices are fabricated using standard electron-beam lithography technique. Each device consists of three connected NWs that form a Y-junction structure with one branch connecting either symmetrically or asymmetrically to a circular disk for DW nucleation. The DW dynamics in the devices are studied by in situ magnetic force microscopy (MFM) by pinning the DWs to triangular notches at each branch of the two devices. We observe that the DW injection field values differ depending on whether they are connected to the circular disks symmetrically or asymmetrically. However, after they pass the Y-junctions, a selection is made by the DWs to propagate easily either through both or through only one particular outgoing branch of the devices. The experimental observations are analyzed by micromagnetic simulation. It can be inferred from the results that the influence of detailed geometrical shape of the devices leads to significantly different interactions among the innate topological defects and the notches with the injected DWs.
Original language | English |
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Article number | 1650006 |
Journal | SPIN |
Volume | 6 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2016 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Differential Domain Wall Propagation in Y-Shaped Permalloy Nanowire Devices. / Das, Bipul; Chen, Ting Chieh; Shiu, Deng Shiang; Horng, Lance; Wu, Jong-Ching.
In: SPIN, Vol. 6, No. 1, 1650006, 01.01.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Differential Domain Wall Propagation in Y-Shaped Permalloy Nanowire Devices
AU - Das, Bipul
AU - Chen, Ting Chieh
AU - Shiu, Deng Shiang
AU - Horng, Lance
AU - Wu, Jong-Ching
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Here, we report an investigation of magnetic domain wall (DW) evolution and propagation in Y-shaped permalloy (Py) nanowire (NW) devices. The devices are fabricated using standard electron-beam lithography technique. Each device consists of three connected NWs that form a Y-junction structure with one branch connecting either symmetrically or asymmetrically to a circular disk for DW nucleation. The DW dynamics in the devices are studied by in situ magnetic force microscopy (MFM) by pinning the DWs to triangular notches at each branch of the two devices. We observe that the DW injection field values differ depending on whether they are connected to the circular disks symmetrically or asymmetrically. However, after they pass the Y-junctions, a selection is made by the DWs to propagate easily either through both or through only one particular outgoing branch of the devices. The experimental observations are analyzed by micromagnetic simulation. It can be inferred from the results that the influence of detailed geometrical shape of the devices leads to significantly different interactions among the innate topological defects and the notches with the injected DWs.
AB - Here, we report an investigation of magnetic domain wall (DW) evolution and propagation in Y-shaped permalloy (Py) nanowire (NW) devices. The devices are fabricated using standard electron-beam lithography technique. Each device consists of three connected NWs that form a Y-junction structure with one branch connecting either symmetrically or asymmetrically to a circular disk for DW nucleation. The DW dynamics in the devices are studied by in situ magnetic force microscopy (MFM) by pinning the DWs to triangular notches at each branch of the two devices. We observe that the DW injection field values differ depending on whether they are connected to the circular disks symmetrically or asymmetrically. However, after they pass the Y-junctions, a selection is made by the DWs to propagate easily either through both or through only one particular outgoing branch of the devices. The experimental observations are analyzed by micromagnetic simulation. It can be inferred from the results that the influence of detailed geometrical shape of the devices leads to significantly different interactions among the innate topological defects and the notches with the injected DWs.
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U2 - 10.1142/S2010324716500065
DO - 10.1142/S2010324716500065
M3 - Article
AN - SCOPUS:85059858351
VL - 6
JO - SPIN
JF - SPIN
SN - 2010-3247
IS - 1
M1 - 1650006
ER -