Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

Yow-Jon Lin; Hou Yen Tsao; Day Shan Liu

doi:10.1007/s10854-015-2726-8

Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

Yow-Jon Lin, Hou Yen Tsao, Day Shan Liu

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiN_x dielectric is higher than that in the pentacene film deposited on a SiO₂ dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.

Original language	English
Pages (from-to)	2579-2583
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	4
DOIs	https://doi.org/10.1007/s10854-015-2726-8
Publication status	Published - 2015 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.",

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AB - Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.

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