Abstract
Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.
| Original language | English |
|---|---|
| Pages (from-to) | 2579-2583 |
| Number of pages | 5 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 26 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films. / Lin, Yow-Jon; Tsao, Hou Yen; Liu, Day Shan.
In: Journal of Materials Science: Materials in Electronics, Vol. 26, No. 4, 01.01.2015, p. 2579-2583.Research output: Contribution to journal › Article
TY - JOUR
T1 - Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films
AU - Lin, Yow-Jon
AU - Tsao, Hou Yen
AU - Liu, Day Shan
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.
AB - Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.
UR - http://www.scopus.com/inward/record.url?scp=84925464667&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925464667&partnerID=8YFLogxK
U2 - 10.1007/s10854-015-2726-8
DO - 10.1007/s10854-015-2726-8
M3 - Article
AN - SCOPUS:84925464667
VL - 26
SP - 2579
EP - 2583
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 4
ER -