Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

Yow-Jon Lin, Hou Yen Tsao, Day Shan Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.

Original languageEnglish
Pages (from-to)2579-2583
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number4
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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