Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

Yow-Jon Lin, Hou Yen Tsao, Day Shan Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiNx dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.

Original languageEnglish
Pages (from-to)2579-2583
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number4
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Carrier mobility
Electric properties
carrier mobility
electrical properties
Substrates
Temperature
temperature
Hall effect
Gene Conversion
Electronic properties
Carrier concentration
Transistors
transistors
spacing
Molecules
pentacene
electronics
molecules

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films. / Lin, Yow-Jon; Tsao, Hou Yen; Liu, Day Shan.

In: Journal of Materials Science: Materials in Electronics, Vol. 26, No. 4, 01.01.2015, p. 2579-2583.

Research output: Contribution to journalArticle

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