Diameter-dependent guided resonance of dielectric hole-array membrane

Neil Ou, J. H. Shyu, H. M. Lee, J. C. Wu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Silicon nitride photonic crystal slabs having various submicron lattice constants and hole diameters have been investigated, in which optical transmission measurements were utilized in the characterization of the guided resonance. Samples were fabricated by using standard electron beam lithography in combination with KOH wet etching and reactive ion etching dry etching through a silicon substrate and silicon nitride membrane, respectively. The transmittance data reveal the asymmetrical shape of absorption dips associated with Fano resonance, and the positions of the resonance were found to be in accordance with the lattice constant. In addition, multiabsorption dips were evolved from the main absorption dip and became discernable when increasing the hole diameter. The plane wave expansion method was used to identify the mode splitting in the band structure that is caused by a finite size hole diameter, giving rise to the multiabsorption dips. Furthermore, the finite element method was used to calculate the transmission spectra. The simulated representations were in positive agreement with the experimental results.

Original languageEnglish
Pages (from-to)3183-3186
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number6
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

etching
membranes
Membranes
Silicon nitride
silicon nitrides
Lattice constants
Dry etching
Electron beam lithography
Wet etching
Reactive ion etching
Light transmission
Photonic crystals
Band structure
nitrides
transmittance
finite element method
slabs
plane waves
lithography
photonics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{759c1e1779834c5fa45aad204fb55565,
title = "Diameter-dependent guided resonance of dielectric hole-array membrane",
abstract = "Silicon nitride photonic crystal slabs having various submicron lattice constants and hole diameters have been investigated, in which optical transmission measurements were utilized in the characterization of the guided resonance. Samples were fabricated by using standard electron beam lithography in combination with KOH wet etching and reactive ion etching dry etching through a silicon substrate and silicon nitride membrane, respectively. The transmittance data reveal the asymmetrical shape of absorption dips associated with Fano resonance, and the positions of the resonance were found to be in accordance with the lattice constant. In addition, multiabsorption dips were evolved from the main absorption dip and became discernable when increasing the hole diameter. The plane wave expansion method was used to identify the mode splitting in the band structure that is caused by a finite size hole diameter, giving rise to the multiabsorption dips. Furthermore, the finite element method was used to calculate the transmission spectra. The simulated representations were in positive agreement with the experimental results.",
author = "Neil Ou and Shyu, {J. H.} and Lee, {H. M.} and Wu, {J. C.}",
year = "2009",
month = "12",
day = "1",
doi = "10.1116/1.3259957",
language = "English",
volume = "27",
pages = "3183--3186",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

Diameter-dependent guided resonance of dielectric hole-array membrane. / Ou, Neil; Shyu, J. H.; Lee, H. M.; Wu, J. C.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 6, 01.12.2009, p. 3183-3186.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Diameter-dependent guided resonance of dielectric hole-array membrane

AU - Ou, Neil

AU - Shyu, J. H.

AU - Lee, H. M.

AU - Wu, J. C.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Silicon nitride photonic crystal slabs having various submicron lattice constants and hole diameters have been investigated, in which optical transmission measurements were utilized in the characterization of the guided resonance. Samples were fabricated by using standard electron beam lithography in combination with KOH wet etching and reactive ion etching dry etching through a silicon substrate and silicon nitride membrane, respectively. The transmittance data reveal the asymmetrical shape of absorption dips associated with Fano resonance, and the positions of the resonance were found to be in accordance with the lattice constant. In addition, multiabsorption dips were evolved from the main absorption dip and became discernable when increasing the hole diameter. The plane wave expansion method was used to identify the mode splitting in the band structure that is caused by a finite size hole diameter, giving rise to the multiabsorption dips. Furthermore, the finite element method was used to calculate the transmission spectra. The simulated representations were in positive agreement with the experimental results.

AB - Silicon nitride photonic crystal slabs having various submicron lattice constants and hole diameters have been investigated, in which optical transmission measurements were utilized in the characterization of the guided resonance. Samples were fabricated by using standard electron beam lithography in combination with KOH wet etching and reactive ion etching dry etching through a silicon substrate and silicon nitride membrane, respectively. The transmittance data reveal the asymmetrical shape of absorption dips associated with Fano resonance, and the positions of the resonance were found to be in accordance with the lattice constant. In addition, multiabsorption dips were evolved from the main absorption dip and became discernable when increasing the hole diameter. The plane wave expansion method was used to identify the mode splitting in the band structure that is caused by a finite size hole diameter, giving rise to the multiabsorption dips. Furthermore, the finite element method was used to calculate the transmission spectra. The simulated representations were in positive agreement with the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=72849150309&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72849150309&partnerID=8YFLogxK

U2 - 10.1116/1.3259957

DO - 10.1116/1.3259957

M3 - Article

AN - SCOPUS:72849150309

VL - 27

SP - 3183

EP - 3186

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

ER -