Design of ternary content-addressable memories with dynamically power-gated storage cells using finfets

Meng-Chou Chang, Kai Lun He, Yu Chieh Wang

Research output: Contribution to journalArticle

Abstract

An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which power-gate the prefix data storage unit when storing a 'don't care' value. With the dynamic power-gating mechanism, DPG-17T/DPG-16T achieve lower power dissipation by eliminating the switching power of the comparison FinFETs and suppressing the leakage power of the prefix data storage when storing a 'don't care' value. Moreover, the discharge path of the matchline in DPG-17T/DPG-16T can be constructed with only one FinFET instead of two FinFETs, greatly boosting the search speed. Simulation results have shown that a TCAM of 64-wordx128-bit using DPG-17T/DPG-16T can reduce the worst-case search delay by 53.0%/53.6% and improve the energy-delay product by 68.5%/70.4% when operating under a search rate of 4.0 GHz.

Original languageEnglish
Pages (from-to)9-15
Number of pages7
JournalElectronics
Volume20
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1

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Associative storage
Data storage equipment
FinFET
Energy dissipation
Transistors
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

@article{e8083f5ce5cb49cfb32ac0b5b7b15974,
title = "Design of ternary content-addressable memories with dynamically power-gated storage cells using finfets",
abstract = "An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which power-gate the prefix data storage unit when storing a 'don't care' value. With the dynamic power-gating mechanism, DPG-17T/DPG-16T achieve lower power dissipation by eliminating the switching power of the comparison FinFETs and suppressing the leakage power of the prefix data storage when storing a 'don't care' value. Moreover, the discharge path of the matchline in DPG-17T/DPG-16T can be constructed with only one FinFET instead of two FinFETs, greatly boosting the search speed. Simulation results have shown that a TCAM of 64-wordx128-bit using DPG-17T/DPG-16T can reduce the worst-case search delay by 53.0{\%}/53.6{\%} and improve the energy-delay product by 68.5{\%}/70.4{\%} when operating under a search rate of 4.0 GHz.",
author = "Meng-Chou Chang and He, {Kai Lun} and Wang, {Yu Chieh}",
year = "2016",
month = "1",
day = "1",
doi = "10.7251/ELS1620055D",
language = "English",
volume = "20",
pages = "9--15",
journal = "Electronics",
issn = "1450-5843",
publisher = "Faculty of Electrical Engineering Banja Luka",
number = "1",

}

Design of ternary content-addressable memories with dynamically power-gated storage cells using finfets. / Chang, Meng-Chou; He, Kai Lun; Wang, Yu Chieh.

In: Electronics, Vol. 20, No. 1, 01.01.2016, p. 9-15.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Design of ternary content-addressable memories with dynamically power-gated storage cells using finfets

AU - Chang, Meng-Chou

AU - He, Kai Lun

AU - Wang, Yu Chieh

PY - 2016/1/1

Y1 - 2016/1/1

N2 - An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which power-gate the prefix data storage unit when storing a 'don't care' value. With the dynamic power-gating mechanism, DPG-17T/DPG-16T achieve lower power dissipation by eliminating the switching power of the comparison FinFETs and suppressing the leakage power of the prefix data storage when storing a 'don't care' value. Moreover, the discharge path of the matchline in DPG-17T/DPG-16T can be constructed with only one FinFET instead of two FinFETs, greatly boosting the search speed. Simulation results have shown that a TCAM of 64-wordx128-bit using DPG-17T/DPG-16T can reduce the worst-case search delay by 53.0%/53.6% and improve the energy-delay product by 68.5%/70.4% when operating under a search rate of 4.0 GHz.

AB - An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which power-gate the prefix data storage unit when storing a 'don't care' value. With the dynamic power-gating mechanism, DPG-17T/DPG-16T achieve lower power dissipation by eliminating the switching power of the comparison FinFETs and suppressing the leakage power of the prefix data storage when storing a 'don't care' value. Moreover, the discharge path of the matchline in DPG-17T/DPG-16T can be constructed with only one FinFET instead of two FinFETs, greatly boosting the search speed. Simulation results have shown that a TCAM of 64-wordx128-bit using DPG-17T/DPG-16T can reduce the worst-case search delay by 53.0%/53.6% and improve the energy-delay product by 68.5%/70.4% when operating under a search rate of 4.0 GHz.

UR - http://www.scopus.com/inward/record.url?scp=85009872716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009872716&partnerID=8YFLogxK

U2 - 10.7251/ELS1620055D

DO - 10.7251/ELS1620055D

M3 - Article

VL - 20

SP - 9

EP - 15

JO - Electronics

JF - Electronics

SN - 1450-5843

IS - 1

ER -