Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Ya Hsuan Shih, Jih Yuan Chang, Jinn Kong Sheu, Yen Kuang Kuo, Fang Ming Chen, Ming Lun Lee, Wei Chih Lai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1-xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

Original languageEnglish
Article number7399737
Pages (from-to)1141-1147
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

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Diodes
Electrons
Light emitting diodes
Chemical analysis
Valence bands
Band structure
Ultraviolet Rays
Polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Shih, Ya Hsuan ; Chang, Jih Yuan ; Sheu, Jinn Kong ; Kuo, Yen Kuang ; Chen, Fang Ming ; Lee, Ming Lun ; Lai, Wei Chih. / Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes. In: IEEE Transactions on Electron Devices. 2016 ; Vol. 63, No. 3. pp. 1141-1147.
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Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes. / Shih, Ya Hsuan; Chang, Jih Yuan; Sheu, Jinn Kong; Kuo, Yen Kuang; Chen, Fang Ming; Lee, Ming Lun; Lai, Wei Chih.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 3, 7399737, 01.03.2016, p. 1141-1147.

Research output: Contribution to journalArticle

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