Abstract
An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 358-359 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781479951451 |
| DOIs | |
| Publication status | Published - 2014 Feb 3 |
| Event | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan Duration: 2014 Oct 7 → 2014 Oct 10 |
Publication series
| Name | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
|---|
Other
| Other | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 14-10-07 → 14-10-10 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
}
Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. / Chang, Meng Chou; He, Kai Lun; Wang, Yu Chieh.
2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 358-359 7031172 (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET
AU - Chang, Meng Chou
AU - He, Kai Lun
AU - Wang, Yu Chieh
PY - 2014/2/3
Y1 - 2014/2/3
N2 - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
AB - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
UR - http://www.scopus.com/inward/record.url?scp=84946687245&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946687245&partnerID=8YFLogxK
U2 - 10.1109/GCCE.2014.7031172
DO - 10.1109/GCCE.2014.7031172
M3 - Conference contribution
AN - SCOPUS:84946687245
T3 - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
SP - 358
EP - 359
BT - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -