Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Meng Chou Chang; Kai Lun He; Yu Chieh Wang

doi:10.1109/GCCE.2014.7031172

Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Meng Chou Chang, Kai Lun He, Yu Chieh Wang

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

Original language	English
Title of host publication	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	358-359
Number of pages	2
ISBN (Electronic)	9781479951451
DOIs	https://doi.org/10.1109/GCCE.2014.7031172
Publication status	Published - 2014 Feb 3
Event	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan Duration: 2014 Oct 7 → 2014 Oct 10

Publication series

Name	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Other

Other	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Country	Japan
City	Tokyo
Period	14-10-07 → 14-10-10

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Chang, M. C., He, K. L., & Wang, Y. C. (2014). Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 (pp. 358-359). [7031172] (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE.2014.7031172

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title = "Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET",

abstract = "An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.",

author = "Chang, {Meng Chou} and He, {Kai Lun} and Wang, {Yu Chieh}",

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Chang, MC, He, KL & Wang, YC 2014, Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. in 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014., 7031172, 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014, Institute of Electrical and Electronics Engineers Inc., pp. 358-359, 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014, Tokyo, Japan, 14-10-07. https://doi.org/10.1109/GCCE.2014.7031172

Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. / Chang, Meng Chou; He, Kai Lun; Wang, Yu Chieh.

2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 358-359 7031172 (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

AB - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

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Chang MC, He KL, Wang YC. Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 358-359. 7031172. (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014). https://doi.org/10.1109/GCCE.2014.7031172

Access to Document

10.1109/GCCE.2014.7031172