TY - GEN
T1 - Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET
AU - Chang, Meng Chou
AU - He, Kai Lun
AU - Wang, Yu Chieh
PY - 2014/2/3
Y1 - 2014/2/3
N2 - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
AB - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
UR - http://www.scopus.com/inward/record.url?scp=84946687245&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946687245&partnerID=8YFLogxK
U2 - 10.1109/GCCE.2014.7031172
DO - 10.1109/GCCE.2014.7031172
M3 - Conference contribution
AN - SCOPUS:84946687245
T3 - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
SP - 358
EP - 359
BT - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Y2 - 7 October 2014 through 10 October 2014
ER -