Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Meng Chou Chang, Kai Lun He, Yu Chieh Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

Original languageEnglish
Title of host publication2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages358-359
Number of pages2
ISBN (Electronic)9781479951451
DOIs
Publication statusPublished - 2014 Feb 3
Event2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan
Duration: 2014 Oct 72014 Oct 10

Publication series

Name2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Other

Other2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
CountryJapan
CityTokyo
Period14-10-0714-10-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Chang, M. C., He, K. L., & Wang, Y. C. (2014). Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 (pp. 358-359). [7031172] (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE.2014.7031172