Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Man Fang Huang, Bo Ting Liou, Ya Hsuan Shih

Research output: Contribution to journalArticle

Abstract

Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

Original languageEnglish
Article number8922638
JournalIEEE Journal of Quantum Electronics
Volume56
Issue number1
DOIs
Publication statusPublished - 2020 Feb

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ultraviolet radiation
Light emitting diodes
light emitting diodes
optimization
Electrons
electrons
plugs
Doping (additives)
Ultraviolet Rays
Chemical analysis
Physical properties
physical properties
Crystalline materials
output
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes",
abstract = "Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.",
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language = "English",
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Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes. / Kuo, Yen Kuang; Chen, Fang Ming; Chang, Jih Yuan; Huang, Man Fang; Liou, Bo Ting; Shih, Ya Hsuan.

In: IEEE Journal of Quantum Electronics, Vol. 56, No. 1, 8922638, 02.2020.

Research output: Contribution to journalArticle

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AU - Chen, Fang Ming

AU - Chang, Jih Yuan

AU - Huang, Man Fang

AU - Liou, Bo Ting

AU - Shih, Ya Hsuan

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