Abstract
Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.
| Original language | English |
|---|---|
| Article number | 8922638 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 56 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2020 Feb |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes. / Kuo, Yen Kuang; Chen, Fang Ming; Chang, Jih Yuan; Huang, Man Fang; Liou, Bo Ting; Shih, Ya Hsuan.
In: IEEE Journal of Quantum Electronics, Vol. 56, No. 1, 8922638, 02.2020.Research output: Contribution to journal › Article
TY - JOUR
T1 - Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes
AU - Kuo, Yen Kuang
AU - Chen, Fang Ming
AU - Chang, Jih Yuan
AU - Huang, Man Fang
AU - Liou, Bo Ting
AU - Shih, Ya Hsuan
PY - 2020/2
Y1 - 2020/2
N2 - Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.
AB - Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.
UR - http://www.scopus.com/inward/record.url?scp=85077340582&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077340582&partnerID=8YFLogxK
U2 - 10.1109/JQE.2019.2957575
DO - 10.1109/JQE.2019.2957575
M3 - Article
AN - SCOPUS:85077340582
VL - 56
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 1
M1 - 8922638
ER -