Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo; Fang Ming Chen; Jih Yuan Chang; Man Fang Huang; Bo Ting Liou; Ya Hsuan Shih

doi:10.1109/JQE.2019.2957575

Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Man Fang Huang, Bo Ting Liou, Ya Hsuan Shih

Research output: Contribution to journal › Article

Abstract

Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al_0.85Ga_0.15N EBL with a relatively low Mg-doping concentration of 2× 10¹⁹ cm^-3 may have high wall-plug efficiency. The LED structure with Al_0.55Ga_0.45N/Al_0.75Ga_0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al_0.85Ga_0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

Original language	English
Article number	8922638
Journal	IEEE Journal of Quantum Electronics
Volume	56
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2019.2957575
Publication status	Published - 2020 Feb

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes",

abstract = "Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.",

author = "Kuo, {Yen Kuang} and Chen, {Fang Ming} and Chang, {Jih Yuan} and Huang, {Man Fang} and Liou, {Bo Ting} and Shih, {Ya Hsuan}",

year = "2020",

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doi = "10.1109/JQE.2019.2957575",

language = "English",

volume = "56",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

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AU - Kuo, Yen Kuang

AU - Chen, Fang Ming

AU - Chang, Jih Yuan

AU - Huang, Man Fang

AU - Liou, Bo Ting

AU - Shih, Ya Hsuan

PY - 2020/2

Y1 - 2020/2

N2 - Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

AB - Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

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