Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo; Fang Ming Chen; Jih Yuan Chang; Man Fang Huang; Bo Ting Liou; Ya Hsuan Shih

doi:10.1109/JQE.2019.2957575

Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Man Fang Huang, Bo Ting Liou, Ya Hsuan Shih

Research output: Contribution to journal › Article

Abstract

Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al_0.85Ga_0.15N EBL with a relatively low Mg-doping concentration of 2× 10¹⁹ cm^-3 may have high wall-plug efficiency. The LED structure with Al_0.55Ga_0.45N/Al_0.75Ga_0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al_0.85Ga_0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

Original language	English
Article number	8922638
Journal	IEEE Journal of Quantum Electronics
Volume	56
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2019.2957575
Publication status	Published - 2020 Feb

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All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Chen, F. M., Chang, J. Y., Huang, M. F., Liou, B. T., & Shih, Y. H. (2020). Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes. IEEE Journal of Quantum Electronics, 56(1), [8922638]. https://doi.org/10.1109/JQE.2019.2957575

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title = "Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes",

abstract = "Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.",

author = "Kuo, {Yen Kuang} and Chen, {Fang Ming} and Chang, {Jih Yuan} and Huang, {Man Fang} and Liou, {Bo Ting} and Shih, {Ya Hsuan}",

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doi = "10.1109/JQE.2019.2957575",

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AU - Kuo, Yen Kuang

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AU - Chang, Jih Yuan

AU - Huang, Man Fang

AU - Liou, Bo Ting

AU - Shih, Ya Hsuan

PY - 2020/2

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N2 - Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

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10.1109/JQE.2019.2957575