Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer

B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, C. C. Lin, P. T. Lee, Y. K. Kuo, M. H. Shih, H. C. Kuo, T. C. Lu, S. C. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm-2 is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm-2 and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.

Original languageEnglish
Article number085002
JournalLaser Physics Letters
Volume11
Issue number8
DOIs
Publication statusPublished - 2014 Aug 1

Fingerprint

Surface emitting lasers
surface emitting lasers
laser outputs
Fabrication
cavities
fabrication
Electrons
Chemical analysis
Threshold current density
electrons
Lasers
threshold currents
Leakage currents
Semiconductor quantum wells
leakage
quantum wells
injection
current density
slopes
output

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Physics and Astronomy (miscellaneous)

Cite this

Lin, B. C. ; Chang, Y. A. ; Chen, K. J. ; Chiu, C. H. ; Li, Z. Y. ; Lan, Y. P. ; Lin, C. C. ; Lee, P. T. ; Kuo, Y. K. ; Shih, M. H. ; Kuo, H. C. ; Lu, T. C. ; Wang, S. C. / Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer. In: Laser Physics Letters. 2014 ; Vol. 11, No. 8.
@article{62070614dc744c779516a0940f7feb82,
title = "Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer",
abstract = "In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm-2 is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm-2 and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.",
author = "Lin, {B. C.} and Chang, {Y. A.} and Chen, {K. J.} and Chiu, {C. H.} and Li, {Z. Y.} and Lan, {Y. P.} and Lin, {C. C.} and Lee, {P. T.} and Kuo, {Y. K.} and Shih, {M. H.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.}",
year = "2014",
month = "8",
day = "1",
doi = "10.1088/1612-2011/11/8/085002",
language = "English",
volume = "11",
journal = "Laser Physics Letters",
issn = "1612-2011",
publisher = "Wiley-VCH Verlag",
number = "8",

}

Lin, BC, Chang, YA, Chen, KJ, Chiu, CH, Li, ZY, Lan, YP, Lin, CC, Lee, PT, Kuo, YK, Shih, MH, Kuo, HC, Lu, TC & Wang, SC 2014, 'Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer', Laser Physics Letters, vol. 11, no. 8, 085002. https://doi.org/10.1088/1612-2011/11/8/085002

Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer. / Lin, B. C.; Chang, Y. A.; Chen, K. J.; Chiu, C. H.; Li, Z. Y.; Lan, Y. P.; Lin, C. C.; Lee, P. T.; Kuo, Y. K.; Shih, M. H.; Kuo, H. C.; Lu, T. C.; Wang, S. C.

In: Laser Physics Letters, Vol. 11, No. 8, 085002, 01.08.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer

AU - Lin, B. C.

AU - Chang, Y. A.

AU - Chen, K. J.

AU - Chiu, C. H.

AU - Li, Z. Y.

AU - Lan, Y. P.

AU - Lin, C. C.

AU - Lee, P. T.

AU - Kuo, Y. K.

AU - Shih, M. H.

AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

PY - 2014/8/1

Y1 - 2014/8/1

N2 - In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm-2 is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm-2 and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.

AB - In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm-2 is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm-2 and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.

UR - http://www.scopus.com/inward/record.url?scp=84904278469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904278469&partnerID=8YFLogxK

U2 - 10.1088/1612-2011/11/8/085002

DO - 10.1088/1612-2011/11/8/085002

M3 - Article

AN - SCOPUS:84904278469

VL - 11

JO - Laser Physics Letters

JF - Laser Physics Letters

SN - 1612-2011

IS - 8

M1 - 085002

ER -