Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode

Yi An Chang, Yu Rui Lin, Jih-Yuan Chang, Tsun Hsin Wang, Yen-Kuang Kuo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.

Original languageEnglish
Article number6507317
Pages (from-to)553-559
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume49
Issue number6
DOIs
Publication statusPublished - 2013 May 22

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ultraviolet radiation
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Polarization
polarization
Electrons
electrons
radiative recombination
Wave functions
Conduction bands
Band structure
energy bands
conduction bands
wave functions
Ultraviolet Rays
profiles
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode",
abstract = "The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.",
author = "Chang, {Yi An} and Lin, {Yu Rui} and Jih-Yuan Chang and Wang, {Tsun Hsin} and Yen-Kuang Kuo",
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Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode. / Chang, Yi An; Lin, Yu Rui; Chang, Jih-Yuan; Wang, Tsun Hsin; Kuo, Yen-Kuang.

In: IEEE Journal of Quantum Electronics, Vol. 49, No. 6, 6507317, 22.05.2013, p. 553-559.

Research output: Contribution to journalArticle

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T1 - Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode

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AU - Lin, Yu Rui

AU - Chang, Jih-Yuan

AU - Wang, Tsun Hsin

AU - Kuo, Yen-Kuang

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AB - The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.

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