Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode

Yi An Chang; Yu Rui Lin; Jih Yuan Chang; Tsun Hsin Wang; Yen Kuang Kuo

doi:10.1109/JQE.2013.2259467

Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode

Yi An Chang, Yu Rui Lin, Jih Yuan Chang, Tsun Hsin Wang, Yen Kuang Kuo

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al_0.54In_0.26Ga_0.20N and Al _0.83In_0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al_0.005In _0.02Ga_0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al_0.005In _0.02Ga_0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.

Original language	English
Article number	6507317
Pages (from-to)	553-559
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	49
Issue number	6
DOIs	https://doi.org/10.1109/JQE.2013.2259467
Publication status	Published - 2013 May 22

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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Chang, Y. A., Lin, Y. R., Chang, J. Y., Wang, T. H., & Kuo, Y. K. (2013). Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode. IEEE Journal of Quantum Electronics, 49(6), 553-559. [6507317]. https://doi.org/10.1109/JQE.2013.2259467

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abstract = "The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.",

author = "Chang, {Yi An} and Lin, {Yu Rui} and Chang, {Jih Yuan} and Wang, {Tsun Hsin} and Kuo, {Yen Kuang}",

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AU - Kuo, Yen Kuang

PY - 2013/5/22

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