Abstract
The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.
| Original language | English |
|---|---|
| Article number | 6507317 |
| Pages (from-to) | 553-559 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 49 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2013 May 22 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode. / Chang, Yi An; Lin, Yu Rui; Chang, Jih-Yuan; Wang, Tsun Hsin; Kuo, Yen-Kuang.
In: IEEE Journal of Quantum Electronics, Vol. 49, No. 6, 6507317, 22.05.2013, p. 553-559.Research output: Contribution to journal › Article
TY - JOUR
T1 - Design and characterization of polarization-reversed alingan based ultraviolet light-emitting diode
AU - Chang, Yi An
AU - Lin, Yu Rui
AU - Chang, Jih-Yuan
AU - Wang, Tsun Hsin
AU - Kuo, Yen-Kuang
PY - 2013/5/22
Y1 - 2013/5/22
N2 - The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.
AB - The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al 0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In 0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In 0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.
UR - http://www.scopus.com/inward/record.url?scp=84877854820&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877854820&partnerID=8YFLogxK
U2 - 10.1109/JQE.2013.2259467
DO - 10.1109/JQE.2013.2259467
M3 - Article
VL - 49
SP - 553
EP - 559
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 6
M1 - 6507317
ER -