Depinning Field of Vortex Domain Wall in Wide Magnetic Wires with Asymmetric Notches Using Magneto-Optical Kerr Effect Microscopy

Deng Shiang Shiu, Yun Hong, Chin Han Su, Kao Fan Lai, Jong-Ching Wu, Lin Lin, Yee-Mou Kao, Lance Horng

Research output: Contribution to journalArticle

Abstract

We examined the pinning and depinning fields of the vortex domain wall (VDW) in wide permalloy wires to better understand VDW dynamic behavior. Our sample device has differently designed notches at the center of a 2-μm-wide wire. The notch depth ratio ranged from 0.2 to 0.8, and the asymmetric angles of the notches are 45°, 60°, and 75°. The depinning field was found to have two distribution ranges, similar to how the depinning field depends on VDW chirality in submicron size width wire. Our results also showed that the VDW depinning behavior of a wide wire is the same as that of a narrow wire. The asymmetric notch angle affected the depinning field, which was similar to the results of simulation with 400-nm wire. This suggests that the wide wire depinning field is similar to that of narrow wire.

Original languageEnglish
Pages (from-to)1363-1367
Number of pages5
JournalJournal of Electronic Materials
Volume48
Issue number3
DOIs
Publication statusPublished - 2019 Mar 15

Fingerprint

Optical Kerr effect
Domain walls
notches
Kerr effects
domain wall
Microscopic examination
Vortex flow
wire
Wire
vortices
microscopy
Chirality
Permalloys (trademark)
chirality

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{8dfe4978b0dc4d6f91f9e924020ebdee,
title = "Depinning Field of Vortex Domain Wall in Wide Magnetic Wires with Asymmetric Notches Using Magneto-Optical Kerr Effect Microscopy",
abstract = "We examined the pinning and depinning fields of the vortex domain wall (VDW) in wide permalloy wires to better understand VDW dynamic behavior. Our sample device has differently designed notches at the center of a 2-μm-wide wire. The notch depth ratio ranged from 0.2 to 0.8, and the asymmetric angles of the notches are 45°, 60°, and 75°. The depinning field was found to have two distribution ranges, similar to how the depinning field depends on VDW chirality in submicron size width wire. Our results also showed that the VDW depinning behavior of a wide wire is the same as that of a narrow wire. The asymmetric notch angle affected the depinning field, which was similar to the results of simulation with 400-nm wire. This suggests that the wide wire depinning field is similar to that of narrow wire.",
author = "Shiu, {Deng Shiang} and Yun Hong and Su, {Chin Han} and Lai, {Kao Fan} and Jong-Ching Wu and Lin Lin and Yee-Mou Kao and Lance Horng",
year = "2019",
month = "3",
day = "15",
doi = "10.1007/s11664-018-06886-w",
language = "English",
volume = "48",
pages = "1363--1367",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "3",

}

Depinning Field of Vortex Domain Wall in Wide Magnetic Wires with Asymmetric Notches Using Magneto-Optical Kerr Effect Microscopy. / Shiu, Deng Shiang; Hong, Yun; Su, Chin Han; Lai, Kao Fan; Wu, Jong-Ching; Lin, Lin; Kao, Yee-Mou; Horng, Lance.

In: Journal of Electronic Materials, Vol. 48, No. 3, 15.03.2019, p. 1363-1367.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Depinning Field of Vortex Domain Wall in Wide Magnetic Wires with Asymmetric Notches Using Magneto-Optical Kerr Effect Microscopy

AU - Shiu, Deng Shiang

AU - Hong, Yun

AU - Su, Chin Han

AU - Lai, Kao Fan

AU - Wu, Jong-Ching

AU - Lin, Lin

AU - Kao, Yee-Mou

AU - Horng, Lance

PY - 2019/3/15

Y1 - 2019/3/15

N2 - We examined the pinning and depinning fields of the vortex domain wall (VDW) in wide permalloy wires to better understand VDW dynamic behavior. Our sample device has differently designed notches at the center of a 2-μm-wide wire. The notch depth ratio ranged from 0.2 to 0.8, and the asymmetric angles of the notches are 45°, 60°, and 75°. The depinning field was found to have two distribution ranges, similar to how the depinning field depends on VDW chirality in submicron size width wire. Our results also showed that the VDW depinning behavior of a wide wire is the same as that of a narrow wire. The asymmetric notch angle affected the depinning field, which was similar to the results of simulation with 400-nm wire. This suggests that the wide wire depinning field is similar to that of narrow wire.

AB - We examined the pinning and depinning fields of the vortex domain wall (VDW) in wide permalloy wires to better understand VDW dynamic behavior. Our sample device has differently designed notches at the center of a 2-μm-wide wire. The notch depth ratio ranged from 0.2 to 0.8, and the asymmetric angles of the notches are 45°, 60°, and 75°. The depinning field was found to have two distribution ranges, similar to how the depinning field depends on VDW chirality in submicron size width wire. Our results also showed that the VDW depinning behavior of a wide wire is the same as that of a narrow wire. The asymmetric notch angle affected the depinning field, which was similar to the results of simulation with 400-nm wire. This suggests that the wide wire depinning field is similar to that of narrow wire.

UR - http://www.scopus.com/inward/record.url?scp=85059830318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059830318&partnerID=8YFLogxK

U2 - 10.1007/s11664-018-06886-w

DO - 10.1007/s11664-018-06886-w

M3 - Article

VL - 48

SP - 1363

EP - 1367

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 3

ER -