Dependence of photocurrent of poly(3-hexylthiophene)/n-type Si diodes upon incorporation of ZnO nanoparticles

Yow Jon Lin, Yi Min Chin, Hou Yen Tsao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, the effect of the incorporation of ZnO nanoparticles into poly(3-hexylthiophene) (P3HT) on photocurrent of P3HT/n-type Si diodes was examined. Charge detrapping/trapping phenomena are studied through time domain measurement for P3HT-based diodes and thin-film transistors. Hole detrapping was the dominant phenomena in P3HT (ZnO-doped P3HT) films. For higher density of ZnO, more holes can be released and induce higher photosensitivity of the device. ZnO influences the photoresponse by providing additional holes that serve to reduce the photocurrent time constant.

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalThin Solid Films
Volume550
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Photocurrents
photocurrents
Diodes
diodes
Nanoparticles
nanoparticles
Charge trapping
Photosensitivity
Thin film transistors
photosensitivity
time constant
transistors
trapping
thin films
poly(3-hexylthiophene)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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Dependence of photocurrent of poly(3-hexylthiophene)/n-type Si diodes upon incorporation of ZnO nanoparticles. / Lin, Yow Jon; Chin, Yi Min; Tsao, Hou Yen.

In: Thin Solid Films, Vol. 550, 01.01.2014, p. 554-557.

Research output: Contribution to journalArticle

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