Dependence of carrier transport of [6,6]-phenyl C61-butyric acid methyl ester/p-type Si diodes upon incorporation of ZnO nanoparticles

Yow Jon Lin, Yi Min Chin, Hsing Cheng Chang

Research output: Contribution to journalArticle

Abstract

In this study, the effect of the incorporation of ZnO nanoparticles into [6,6]-phenyl C61-butyric acid methyl ester (PCBM) on carrier transport of PCBM/p-type Si diodes was examined. Correlation effects were evaluated using the well-known expressions for the thermionic emission and space charge limited current. Rectification behavior is affected by the bulk effects of the PCBM layer. It is shown that the incorporation of ZnO nanoparticles leads to the suppression of trap filling effects of the PCBM layer, resulting in improvement in the electrical and optoelectronic performances for PCBM/p-type Si diodes.

Original languageEnglish
Pages (from-to)M5-M8
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Butyric acid
Butyric Acid
Carrier transport
Esters
Diodes
Nanoparticles
Thermionic emission
Electric space charge
Optoelectronic devices
(6,6)-phenyl C61-butyric acid methyl ester

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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Dependence of carrier transport of [6,6]-phenyl C61-butyric acid methyl ester/p-type Si diodes upon incorporation of ZnO nanoparticles. / Lin, Yow Jon; Chin, Yi Min; Chang, Hsing Cheng.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 1, 01.01.2017, p. M5-M8.

Research output: Contribution to journalArticle

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