Delta-doped quantum well structures grown by molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, Jenq-Shinn Wu, D. C. Liou

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 Å has been achieved. This is the narrowest carrier profile ever reported for any growth technique.

Original languageEnglish
Pages (from-to)1887-1888
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number18
DOIs
Publication statusPublished - 1990 Dec 1

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molecular beam epitaxy
quantum wells
profiles
electrical measurement
capacitance
dosage

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, D. G. ; Lee, C. P. ; Chang, K. H. ; Wu, Jenq-Shinn ; Liou, D. C. / Delta-doped quantum well structures grown by molecular beam epitaxy. In: Applied Physics Letters. 1990 ; Vol. 57, No. 18. pp. 1887-1888.
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Delta-doped quantum well structures grown by molecular beam epitaxy. / Liu, D. G.; Lee, C. P.; Chang, K. H.; Wu, Jenq-Shinn; Liou, D. C.

In: Applied Physics Letters, Vol. 57, No. 18, 01.12.1990, p. 1887-1888.

Research output: Contribution to journalArticle

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