Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films

Yow-Jon Lin, Mu Shan Wang, Chia-Jyi Liu, Hsueh Jung Huang

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li i ) and Li substituting for Zn (Li Zn ) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li Zn to Li i , involving the formation of Zn vacancies (V Zn ). In addition, the interaction between these defects (that is, Li Zn , Li i , V Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.

Original languageEnglish
Pages (from-to)7623-7627
Number of pages5
JournalApplied Surface Science
Volume256
Issue number24
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Diffraction
Defects
X ray diffraction
Oxygen vacancies
Vacancies
Sol-gels
Structural properties
Photoluminescence
Crystal structure

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li i ) and Li substituting for Zn (Li Zn ) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li Zn to Li i , involving the formation of Zn vacancies (V Zn ). In addition, the interaction between these defects (that is, Li Zn , Li i , V Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.",
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Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films. / Lin, Yow-Jon; Wang, Mu Shan; Liu, Chia-Jyi; Huang, Hsueh Jung.

In: Applied Surface Science, Vol. 256, No. 24, 01.10.2010, p. 7623-7627.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films

AU - Lin, Yow-Jon

AU - Wang, Mu Shan

AU - Liu, Chia-Jyi

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AB - The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li i ) and Li substituting for Zn (Li Zn ) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li Zn to Li i , involving the formation of Zn vacancies (V Zn ). In addition, the interaction between these defects (that is, Li Zn , Li i , V Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.

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