Abstract
In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.
| Original language | English |
|---|---|
| Article number | 111114 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Mar 14 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers'. Together they form a unique fingerprint.
Cite this
Tsai, M. C., Yen, S. H., & Kuo, Y. K. (2011). Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers. Applied Physics Letters, 98(11), [111114]. https://doi.org/10.1063/1.3567786