Abstract
In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.
| Original language | English |
|---|---|
| Article number | 111114 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Mar 14 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers. / Tsai, Miao Chan; Yen, Sheng Horng; Kuo, Yen Kuang.
In: Applied Physics Letters, Vol. 98, No. 11, 111114, 14.03.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
PY - 2011/3/14
Y1 - 2011/3/14
N2 - In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.
AB - In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.
UR - http://www.scopus.com/inward/record.url?scp=79952938784&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952938784&partnerID=8YFLogxK
U2 - 10.1063/1.3567786
DO - 10.1063/1.3567786
M3 - Article
AN - SCOPUS:79952938784
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 111114
ER -