Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers

Miao Chan Tsai, Sheng Horng Yen, Yen Kuang Kuo

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.

Original languageEnglish
Article number111114
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
Publication statusPublished - 2011 Mar 14

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ultraviolet radiation
light emitting diodes
electrons
augmentation
output
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers. / Tsai, Miao Chan; Yen, Sheng Horng; Kuo, Yen Kuang.

In: Applied Physics Letters, Vol. 98, No. 11, 111114, 14.03.2011.

Research output: Contribution to journalArticle

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