Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor

M. C. Lin, K. Aravind, C. S. Wu, Y. P. Wu, C. H. Kuan, Watson Kuo, C. D. Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

Original languageEnglish
Article number032106
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007 Jan 29

Fingerprint

single electron transistors
cyclotrons
quantum dots
oscillations
shift
silicon
thresholds
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, M. C. ; Aravind, K. ; Wu, C. S. ; Wu, Y. P. ; Kuan, C. H. ; Kuo, Watson ; Chen, C. D. / Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. In: Applied Physics Letters. 2007 ; Vol. 90, No. 3.
@article{6c7fd5b396fe4ad5a0e261905aee2ae4,
title = "Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor",
abstract = "The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.",
author = "Lin, {M. C.} and K. Aravind and Wu, {C. S.} and Wu, {Y. P.} and Kuan, {C. H.} and Watson Kuo and Chen, {C. D.}",
year = "2007",
month = "1",
day = "29",
doi = "10.1063/1.2431565",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. / Lin, M. C.; Aravind, K.; Wu, C. S.; Wu, Y. P.; Kuan, C. H.; Kuo, Watson; Chen, C. D.

In: Applied Physics Letters, Vol. 90, No. 3, 032106, 29.01.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor

AU - Lin, M. C.

AU - Aravind, K.

AU - Wu, C. S.

AU - Wu, Y. P.

AU - Kuan, C. H.

AU - Kuo, Watson

AU - Chen, C. D.

PY - 2007/1/29

Y1 - 2007/1/29

N2 - The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

AB - The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

UR - http://www.scopus.com/inward/record.url?scp=33846460374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846460374&partnerID=8YFLogxK

U2 - 10.1063/1.2431565

DO - 10.1063/1.2431565

M3 - Article

AN - SCOPUS:33846460374

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032106

ER -