Abstract
The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.
| Original language | English |
|---|---|
| Article number | 032106 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 Jan 29 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Lin, M. C., Aravind, K., Wu, C. S., Wu, Y. P., Kuan, C. H., Kuo, W., & Chen, C. D. (2007). Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. Applied Physics Letters, 90(3), [032106]. https://doi.org/10.1063/1.2431565