Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor

M. C. Lin, K. Aravind, C. S. Wu, Y. P. Wu, C. H. Kuan, Watson Kuo, C. D. Chen

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

Original languageEnglish
Article number032106
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007 Jan 29

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single electron transistors
cyclotrons
quantum dots
oscillations
shift
silicon
thresholds
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, M. C., Aravind, K., Wu, C. S., Wu, Y. P., Kuan, C. H., Kuo, W., & Chen, C. D. (2007). Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. Applied Physics Letters, 90(3), [032106]. https://doi.org/10.1063/1.2431565
Lin, M. C. ; Aravind, K. ; Wu, C. S. ; Wu, Y. P. ; Kuan, C. H. ; Kuo, Watson ; Chen, C. D. / Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. In: Applied Physics Letters. 2007 ; Vol. 90, No. 3.
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Lin, MC, Aravind, K, Wu, CS, Wu, YP, Kuan, CH, Kuo, W & Chen, CD 2007, 'Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor', Applied Physics Letters, vol. 90, no. 3, 032106. https://doi.org/10.1063/1.2431565

Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. / Lin, M. C.; Aravind, K.; Wu, C. S.; Wu, Y. P.; Kuan, C. H.; Kuo, Watson; Chen, C. D.

In: Applied Physics Letters, Vol. 90, No. 3, 032106, 29.01.2007.

Research output: Contribution to journal › Article

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AU - Kuo, Watson

AU - Chen, C. D.

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AB - The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

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Lin MC, Aravind K, Wu CS, Wu YP, Kuan CH, Kuo W et al. Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor. Applied Physics Letters. 2007 Jan 29;90(3). 032106. https://doi.org/10.1063/1.2431565

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