Cyclotron localization in a sub- 10-nm silicon quantum dot single electron transistor

M. C. Lin, K. Aravind, C. S. Wu, Y. P. Wu, C. H. Kuan, Watson Kuo, C. D. Chen

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The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.

Original languageEnglish
Article number032106
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2007 Jan 29


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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