Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

Chia Lung Tsai, Cheng Lung Tsai, Guan Ru He, Ting Hong Su, Chang Feng You, Yow-Jon Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.

Original languageEnglish
Pages (from-to)116-120
Number of pages5
JournalSolid-State Electronics
Volume61
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Current voltage characteristics
electric contacts
Diodes
Lighting
Schottky diodes
illumination
electric potential
Conversion efficiency
Surface roughness
surface roughness
reflectance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tsai, Chia Lung ; Tsai, Cheng Lung ; He, Guan Ru ; Su, Ting Hong ; You, Chang Feng ; Lin, Yow-Jon. / Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination. In: Solid-State Electronics. 2011 ; Vol. 61, No. 1. pp. 116-120.
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abstract = "In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.",
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Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination. / Tsai, Chia Lung; Tsai, Cheng Lung; He, Guan Ru; Su, Ting Hong; You, Chang Feng; Lin, Yow-Jon.

In: Solid-State Electronics, Vol. 61, No. 1, 01.07.2011, p. 116-120.

Research output: Contribution to journalArticle

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AU - Tsai, Chia Lung

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AU - You, Chang Feng

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