Current transport mechanism of heterojunction diodes based on the reduced graphene oxide-based polymer composite and n-type Si

Jian Huang Lin, Jian Jhou Zeng, Yu Chao Su, Yow-Jon Lin

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on n-type Si and poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). This heterojunction diode showed a good rectifying behavior with an ideality factor of 1.2. A photocurrent decay model is presented that addresses the charge trapping effect and doping mechanisms for composite PEDOT:PSS films having RGO sheets. The enhanced dark conductivity was observed by incorporating RGO into PEDOT:PSS. For heterojunction diodes, the high photocurrent density originates from efficient hole transport combined with electron trapping with long-second lifetime.

Original languageEnglish
Article number153509
JournalApplied Physics Letters
Volume100
Issue number15
DOIs
Publication statusPublished - 2012 Apr 9

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heterojunctions
graphene
diodes
composite materials
photocurrents
oxides
polymers
trapping
electrical properties
life (durability)
conductivity
fabrication
decay
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Current transport mechanism of heterojunction diodes based on the reduced graphene oxide-based polymer composite and n-type Si. / Lin, Jian Huang; Zeng, Jian Jhou; Su, Yu Chao; Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 100, No. 15, 153509, 09.04.2012.

Research output: Contribution to journalArticle

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