Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment

Guan Ru He, Yow Jon Lin

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.

Original languageEnglish
Pages (from-to)179-183
Number of pages5
JournalMaterials Chemistry and Physics
Volume136
Issue number1
DOIs
Publication statusPublished - 2012 Sep 14

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Sol-gels
Heterojunctions
heterojunctions
Diodes
diodes
gels
Passivation
passivity
defects
leakage
Defects
Interface states
Defect density
Electric properties
Demonstrations
electrical properties
conduction
Fabrication
fabrication
electronics

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{03837e7e543348c584409779e5bf7049,
title = "Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment",
abstract = "The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.",
author = "He, {Guan Ru} and Lin, {Yow Jon}",
year = "2012",
month = "9",
day = "14",
doi = "10.1016/j.matchemphys.2012.06.049",
language = "English",
volume = "136",
pages = "179--183",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "1",

}

Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment. / He, Guan Ru; Lin, Yow Jon.

In: Materials Chemistry and Physics, Vol. 136, No. 1, 14.09.2012, p. 179-183.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment

AU - He, Guan Ru

AU - Lin, Yow Jon

PY - 2012/9/14

Y1 - 2012/9/14

N2 - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.

AB - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.

UR - http://www.scopus.com/inward/record.url?scp=84865478618&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865478618&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2012.06.049

DO - 10.1016/j.matchemphys.2012.06.049

M3 - Article

AN - SCOPUS:84865478618

VL - 136

SP - 179

EP - 183

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 1

ER -