Abstract
The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 179-183 |
| Number of pages | 5 |
| Journal | Materials Chemistry and Physics |
| Volume | 136 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Sep 14 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment. / He, Guan Ru; Lin, Yow Jon.
In: Materials Chemistry and Physics, Vol. 136, No. 1, 14.09.2012, p. 179-183.Research output: Contribution to journal › Article
TY - JOUR
T1 - Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment
AU - He, Guan Ru
AU - Lin, Yow Jon
PY - 2012/9/14
Y1 - 2012/9/14
N2 - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.
AB - The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si. The p-type ZnO/n-type Si diode without H 2O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 6.4 and high leakage. n > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the p-type ZnO/n-type Si diode with H 2O 2 treatment showed a good rectifying behavior with n of 1.6 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H 2O 2 treatment. Highlights: The p-ZnO/n-Si diode without H 2O 2 treatment showed a poor rectifying behavior. The p-ZnO/n-Si diode with H 2O 2 treatment showed a good rectifying behavior. The interfacial defects of the p-ZnO/n-Si diode were controlled by H 2O 2 treatment. Such an improvement indicates that a good passivation is formed at the interface.
UR - http://www.scopus.com/inward/record.url?scp=84865478618&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865478618&partnerID=8YFLogxK
U2 - 10.1016/j.matchemphys.2012.06.049
DO - 10.1016/j.matchemphys.2012.06.049
M3 - Article
AN - SCOPUS:84865478618
VL - 136
SP - 179
EP - 183
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 1
ER -