Abstract
Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 611 |
| DOIs | |
| Publication status | Published - 2016 Jul 29 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Current conduction mechanisms through Au/SnO/n-type Si/In devices. / Tsao, Hou Yen; Wang, Yu Wu.
In: Thin Solid Films, Vol. 611, 29.07.2016, p. 1-5.Research output: Contribution to journal › Article
TY - JOUR
T1 - Current conduction mechanisms through Au/SnO/n-type Si/In devices
AU - Tsao, Hou Yen
AU - Wang, Yu Wu
PY - 2016/7/29
Y1 - 2016/7/29
N2 - Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.
AB - Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.
UR - http://www.scopus.com/inward/record.url?scp=84970996526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84970996526&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2016.05.002
DO - 10.1016/j.tsf.2016.05.002
M3 - Article
AN - SCOPUS:84970996526
VL - 611
SP - 1
EP - 5
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -