Current conduction mechanisms through Au/SnO/n-type Si/In devices

Hou Yen Tsao; Yu Wu Wang

doi:10.1016/j.tsf.2016.05.002

Current conduction mechanisms through Au/SnO/n-type Si/In devices

Hou Yen Tsao, Yu Wu Wang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSi_xO_y layer.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Thin Solid Films
Volume	611
DOIs	https://doi.org/10.1016/j.tsf.2016.05.002
Publication status	Published - 2016 Jul 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Current conduction mechanisms through Au/SnO/n-type Si/In devices",

abstract = "Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.",

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AB - Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.

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