Current conduction mechanisms through Au/SnO/n-type Si/In devices

Hou Yen Tsao, Yu Wu Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalThin Solid Films
Volume611
DOIs
Publication statusPublished - 2016 Jul 29

Fingerprint

Permittivity
injection
conduction
Substrates
permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Current conduction mechanisms through Au/SnO/n-type Si/In devices",
abstract = "Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.",
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Current conduction mechanisms through Au/SnO/n-type Si/In devices. / Tsao, Hou Yen; Wang, Yu Wu.

In: Thin Solid Films, Vol. 611, 29.07.2016, p. 1-5.

Research output: Contribution to journalArticle

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N2 - Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.

AB - Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.

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