Abstract
This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 493-500 |
| Number of pages | 8 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 23 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets. / Lin, Y. C.; Lin, Z. Q.; Shen, C. H.; Wang, L. Q.; Ha, C. T.; Peng, Chris.
In: Journal of Materials Science: Materials in Electronics, Vol. 23, No. 2, 01.02.2012, p. 493-500.Research output: Contribution to journal › Article
TY - JOUR
T1 - Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets
AU - Lin, Y. C.
AU - Lin, Z. Q.
AU - Shen, C. H.
AU - Wang, L. Q.
AU - Ha, C. T.
AU - Peng, Chris
PY - 2012/2/1
Y1 - 2012/2/1
N2 - This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.
AB - This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.
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UR - http://www.scopus.com/inward/citedby.url?scp=84856735213&partnerID=8YFLogxK
U2 - 10.1007/s10854-011-0424-8
DO - 10.1007/s10854-011-0424-8
M3 - Article
AN - SCOPUS:84856735213
VL - 23
SP - 493
EP - 500
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 2
ER -