Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets

Y. C. Lin, Z. Q. Lin, C. H. Shen, L. Q. Wang, C. T. Ha, Chris Peng

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.

Original languageEnglish
Pages (from-to)493-500
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume23
Issue number2
DOIs
Publication statusPublished - 2012 Feb 1

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quaternary alloys
Sputtering
sputtering
Indium
Stoichiometry
indium
stoichiometry
Annealing
electrical resistivity
annealing
thickness ratio
Bond strength (materials)
calcium oxides
Lime
Magnetron sputtering
residual stress
Carrier concentration
Residual stresses
magnetron sputtering
adhesion

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets",
abstract = "This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67{\%} of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.",
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Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets. / Lin, Y. C.; Lin, Z. Q.; Shen, C. H.; Wang, L. Q.; Ha, C. T.; Peng, Chris.

In: Journal of Materials Science: Materials in Electronics, Vol. 23, No. 2, 01.02.2012, p. 493-500.

Research output: Contribution to journalArticle

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AB - This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.

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