Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling; Chu Li Chao; Jun Rong Chen; Po Chun Liu; Tsung Shine Ko; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Shun Jen Cheng; Jenq Dar Tsay

doi:10.1016/j.jcrysgro.2009.10.047

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Shun Jen Cheng, Jenq Dar Tsay

Department of Electronic Engineering

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10⁹ cm^-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

Original language	English
Pages (from-to)	1316-1320
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.10.047
Publication status	Published - 2010 Apr 1

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Ling, S. C., Chao, C. L., Chen, J. R., Liu, P. C., Ko, T. S., Lu, T. C., Kuo, H. C., Wang, S. C., Cheng, S. J., & Tsay, J. D. (2010). Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. Journal of Crystal Growth, 312(8), 1316-1320. https://doi.org/10.1016/j.jcrysgro.2009.10.047

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abstract = "The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.",

author = "Ling, {Shih Chun} and Chao, {Chu Li} and Chen, {Jun Rong} and Liu, {Po Chun} and Ko, {Tsung Shine} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung} and Cheng, {Shun Jen} and Tsay, {Jenq Dar}",

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doi = "10.1016/j.jcrysgro.2009.10.047",

language = "English",

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Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. / Ling, Shih Chun; Chao, Chu Li; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Cheng, Shun Jen; Tsay, Jenq Dar.

In: Journal of Crystal Growth, Vol. 312, No. 8, 01.04.2010, p. 1316-1320.

Research output: Contribution to journal › Article

TY - JOUR

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AU - Ling, Shih Chun

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AU - Ko, Tsung Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Cheng, Shun Jen

AU - Tsay, Jenq Dar

PY - 2010/4/1

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N2 - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

AB - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

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10.1016/j.jcrysgro.2009.10.047