Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Shun Jen Cheng, Jenq Dar Tsay

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

Original languageEnglish
Pages (from-to)1316-1320
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number8
DOIs
Publication statusPublished - 2010 Apr 1

Fingerprint

Nanorods
nanorods
rods
Crystals
templates
crystals
Full width at half maximum
Surface properties
Etching
Photoluminescence
Electron microscopes
Transmission electron microscopy
Scanning
X rays
electron microscopes
etching
photoluminescence
transmission electron microscopy
scanning
curves

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ling, Shih Chun ; Chao, Chu Li ; Chen, Jun Rong ; Liu, Po Chun ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung ; Cheng, Shun Jen ; Tsay, Jenq Dar. / Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 8. pp. 1316-1320.
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abstract = "The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.",
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Ling, SC, Chao, CL, Chen, JR, Liu, PC, Ko, T-S, Lu, TC, Kuo, HC, Wang, SC, Cheng, SJ & Tsay, JD 2010, 'Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods', Journal of Crystal Growth, vol. 312, no. 8, pp. 1316-1320. https://doi.org/10.1016/j.jcrysgro.2009.10.047

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. / Ling, Shih Chun; Chao, Chu Li; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Cheng, Shun Jen; Tsay, Jenq Dar.

In: Journal of Crystal Growth, Vol. 312, No. 8, 01.04.2010, p. 1316-1320.

Research output: Contribution to journalArticle

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AU - Ling, Shih Chun

AU - Chao, Chu Li

AU - Chen, Jun Rong

AU - Liu, Po Chun

AU - Ko, Tsung-Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Cheng, Shun Jen

AU - Tsay, Jenq Dar

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AB - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

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