Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Shun Jen Cheng, Jenq Dar Tsay

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

Original languageEnglish
Pages (from-to)1316-1320
Number of pages5
JournalJournal of Crystal Growth
Issue number8
Publication statusPublished - 2010 Apr 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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