Abstract
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.
Original language | English |
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Pages (from-to) | 1316-1320 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 312 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2010 Apr 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry