Abstract
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.
| Original language | English |
|---|---|
| Pages (from-to) | 1316-1320 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 312 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2010 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
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Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. / Ling, Shih Chun; Chao, Chu Li; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Cheng, Shun Jen; Tsay, Jenq Dar.
In: Journal of Crystal Growth, Vol. 312, No. 8, 01.04.2010, p. 1316-1320.Research output: Contribution to journal › Article
TY - JOUR
T1 - Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
AU - Ling, Shih Chun
AU - Chao, Chu Li
AU - Chen, Jun Rong
AU - Liu, Po Chun
AU - Ko, Tsung-Shine
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
AU - Cheng, Shun Jen
AU - Tsay, Jenq Dar
PY - 2010/4/1
Y1 - 2010/4/1
N2 - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.
AB - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10 9 cm -2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.
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U2 - 10.1016/j.jcrysgro.2009.10.047
DO - 10.1016/j.jcrysgro.2009.10.047
M3 - Article
VL - 312
SP - 1316
EP - 1320
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 8
ER -