Abstract
We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.
| Original language | English |
|---|---|
| Title of host publication | Innovation for Applied Science and Technology |
| Pages | 1168-1172 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2013 Feb 20 |
| Event | 2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 - Kaohsiung, Taiwan Duration: 2012 Nov 2 → 2012 Nov 6 |
Publication series
| Name | Applied Mechanics and Materials |
|---|---|
| Volume | 284-287 |
| ISSN (Print) | 1660-9336 |
| ISSN (Electronic) | 1662-7482 |
Other
| Other | 2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 |
|---|---|
| Country | Taiwan |
| City | Kaohsiung |
| Period | 12-11-02 → 12-11-06 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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Critical electric field of InGaN p-i-n solar cell. / Lin, Der-Yuh; Chi, Chao Yu.
Innovation for Applied Science and Technology. 2013. p. 1168-1172 (Applied Mechanics and Materials; Vol. 284-287).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Critical electric field of InGaN p-i-n solar cell
AU - Lin, Der-Yuh
AU - Chi, Chao Yu
PY - 2013/2/20
Y1 - 2013/2/20
N2 - We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.
AB - We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.
UR - http://www.scopus.com/inward/record.url?scp=84873912856&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873912856&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.284-287.1168
DO - 10.4028/www.scientific.net/AMM.284-287.1168
M3 - Conference contribution
AN - SCOPUS:84873912856
SN - 9783037856123
T3 - Applied Mechanics and Materials
SP - 1168
EP - 1172
BT - Innovation for Applied Science and Technology
ER -