TY - GEN
T1 - Critical electric field of InGaN p-i-n solar cell
AU - Lin, Der-Yuh
AU - Chi, Chao Yu
PY - 2013/2/20
Y1 - 2013/2/20
N2 - We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.
AB - We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.
UR - http://www.scopus.com/inward/record.url?scp=84873912856&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873912856&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.284-287.1168
DO - 10.4028/www.scientific.net/AMM.284-287.1168
M3 - Conference contribution
AN - SCOPUS:84873912856
SN - 9783037856123
T3 - Applied Mechanics and Materials
SP - 1168
EP - 1172
BT - Innovation for Applied Science and Technology
T2 - 2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012
Y2 - 2 November 2012 through 6 November 2012
ER -