Critical electric field of InGaN p-i-n solar cell

Der-Yuh Lin, Chao Yu Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4 x 1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

Original languageEnglish
Title of host publicationInnovation for Applied Science and Technology
Pages1168-1172
Number of pages5
DOIs
Publication statusPublished - 2013 Feb 20
Event2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 - Kaohsiung, Taiwan
Duration: 2012 Nov 22012 Nov 6

Publication series

NameApplied Mechanics and Materials
Volume284-287
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012
CountryTaiwan
CityKaohsiung
Period12-11-0212-11-06

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lin, D-Y., & Chi, C. Y. (2013). Critical electric field of InGaN p-i-n solar cell. In Innovation for Applied Science and Technology (pp. 1168-1172). (Applied Mechanics and Materials; Vol. 284-287). https://doi.org/10.4028/www.scientific.net/AMM.284-287.1168