Coulomb blockade behavior in an indium nitride nanowire with disordered surface states

K. Aravind, Y. W. Su, I. L. Ho, Cen-Shawn Wu, K. S. Chang-Liao, W. F. Su, K. H. Chen, L. C. Chen, C. D. Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present electron transport phenomena in a single electron transistor based on an individual indium nitride nanowire. Meticulous Coulomb oscillations are observed at low temperatures. While the device shows single period Coulomb oscillation at high temperatures or at high bias voltages, additional satellite peaks along with the main Coulomb peak appear at low temperatures and low bias voltages. The quasiperiodic structure is attributed to the mixing of dissimilar Coulomb oscillations arising from two serially coupled islands embedded inadvertently in the surface metallic states of the nanowire. The proposed model is numerically simulated with good agreement with the experimental data.

Original languageEnglish
Article number092110
JournalApplied Physics Letters
Volume95
Issue number9
DOIs
Publication statusPublished - 2009 Sep 14

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nitrides
indium
nanowires
oscillations
single electron transistors
electric potential
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Aravind, K., Su, Y. W., Ho, I. L., Wu, C-S., Chang-Liao, K. S., Su, W. F., ... Chen, C. D. (2009). Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. Applied Physics Letters, 95(9), [092110]. https://doi.org/10.1063/1.3216071
Aravind, K. ; Su, Y. W. ; Ho, I. L. ; Wu, Cen-Shawn ; Chang-Liao, K. S. ; Su, W. F. ; Chen, K. H. ; Chen, L. C. ; Chen, C. D. / Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. In: Applied Physics Letters. 2009 ; Vol. 95, No. 9.
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Aravind, K, Su, YW, Ho, IL, Wu, C-S, Chang-Liao, KS, Su, WF, Chen, KH, Chen, LC & Chen, CD 2009, 'Coulomb blockade behavior in an indium nitride nanowire with disordered surface states', Applied Physics Letters, vol. 95, no. 9, 092110. https://doi.org/10.1063/1.3216071

Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. / Aravind, K.; Su, Y. W.; Ho, I. L.; Wu, Cen-Shawn; Chang-Liao, K. S.; Su, W. F.; Chen, K. H.; Chen, L. C.; Chen, C. D.

In: Applied Physics Letters, Vol. 95, No. 9, 092110, 14.09.2009.

Research output: Contribution to journalArticle

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AU - Chang-Liao, K. S.

AU - Su, W. F.

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AB - We present electron transport phenomena in a single electron transistor based on an individual indium nitride nanowire. Meticulous Coulomb oscillations are observed at low temperatures. While the device shows single period Coulomb oscillation at high temperatures or at high bias voltages, additional satellite peaks along with the main Coulomb peak appear at low temperatures and low bias voltages. The quasiperiodic structure is attributed to the mixing of dissimilar Coulomb oscillations arising from two serially coupled islands embedded inadvertently in the surface metallic states of the nanowire. The proposed model is numerically simulated with good agreement with the experimental data.

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