Coulomb blockade behavior in an indium nitride nanowire with disordered surface states

K. Aravind, Y. W. Su, I. L. Ho, C. S. Wu, K. S. Chang-Liao, W. F. Su, K. H. Chen, L. C. Chen, C. D. Chen

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Abstract

We present electron transport phenomena in a single electron transistor based on an individual indium nitride nanowire. Meticulous Coulomb oscillations are observed at low temperatures. While the device shows single period Coulomb oscillation at high temperatures or at high bias voltages, additional satellite peaks along with the main Coulomb peak appear at low temperatures and low bias voltages. The quasiperiodic structure is attributed to the mixing of dissimilar Coulomb oscillations arising from two serially coupled islands embedded inadvertently in the surface metallic states of the nanowire. The proposed model is numerically simulated with good agreement with the experimental data.

Original languageEnglish
Article number092110
JournalApplied Physics Letters
Volume95
Issue number9
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Aravind, K., Su, Y. W., Ho, I. L., Wu, C. S., Chang-Liao, K. S., Su, W. F., Chen, K. H., Chen, L. C., & Chen, C. D. (2009). Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. Applied Physics Letters, 95(9), [092110]. https://doi.org/10.1063/1.3216071