Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

Jih-Yuan Chang; Yen-Kuang Kuo; Miao Chan Tsai

doi:10.1002/pssa.201026369

Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

Jih-Yuan Chang, Yen-Kuang Kuo, Miao Chan Tsai

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.

Original language	English
Pages (from-to)	729-734
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	3
DOIs	https://doi.org/10.1002/pssa.201026369
Publication status	Published - 2011 Mar 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Chang, J-Y., Kuo, Y-K., & Tsai, M. C. (2011). Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 208(3), 729-734. https://doi.org/10.1002/pssa.201026369

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