Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

Jih-Yuan Chang, Yen-Kuang Kuo, Miao Chan Tsai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.

Original languageEnglish
Pages (from-to)729-734
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

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Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Wave functions
high current
Optical properties
optical properties
Electrons
output
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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AB - Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.

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