Abstract
Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.
Original language | English |
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Pages (from-to) | 729-734 |
Number of pages | 6 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 208 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2011 Mar 1 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films