Abstract
Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.
| Original language | English |
|---|---|
| Pages (from-to) | 729-734 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 208 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 Mar 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
}
Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes. / Chang, Jih-Yuan; Kuo, Yen-Kuang; Tsai, Miao Chan.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 3, 01.03.2011, p. 729-734.Research output: Contribution to journal › Article
TY - JOUR
T1 - Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes
AU - Chang, Jih-Yuan
AU - Kuo, Yen-Kuang
AU - Tsai, Miao Chan
PY - 2011/3/1
Y1 - 2011/3/1
N2 - Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.
AB - Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.
UR - http://www.scopus.com/inward/record.url?scp=79952496860&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952496860&partnerID=8YFLogxK
U2 - 10.1002/pssa.201026369
DO - 10.1002/pssa.201026369
M3 - Article
AN - SCOPUS:79952496860
VL - 208
SP - 729
EP - 734
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 3
ER -