Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

Yow Jon Lin, Yi Min Chin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO2) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.

Original languageEnglish
Article number173709
JournalJournal of Applied Physics
Volume116
Issue number17
DOIs
Publication statusPublished - 2014 Nov 7

Fingerprint

carrier mobility
nanoparticles
titanium oxides
Hall effect
electrons
electrical properties
spacing
temperature dependence
molecules
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{6dd4bac218c540f686b8737f45f205ce,
title = "Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices",
abstract = "A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO2) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.",
author = "Lin, {Yow Jon} and Chin, {Yi Min}",
year = "2014",
month = "11",
day = "7",
doi = "10.1063/1.4901286",
language = "English",
volume = "116",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices. / Lin, Yow Jon; Chin, Yi Min.

In: Journal of Applied Physics, Vol. 116, No. 17, 173709, 07.11.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

AU - Lin, Yow Jon

AU - Chin, Yi Min

PY - 2014/11/7

Y1 - 2014/11/7

N2 - A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO2) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.

AB - A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO2) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.

UR - http://www.scopus.com/inward/record.url?scp=84910089862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84910089862&partnerID=8YFLogxK

U2 - 10.1063/1.4901286

DO - 10.1063/1.4901286

M3 - Article

AN - SCOPUS:84910089862

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 173709

ER -