Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

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Abstract

A correlation between the temperature-dependent leakage conduction, phonon and impurity scatterings and potential fluctuations of graphene/n-type Si Schottky diodes is identified. For applying a sufficiently high reverse-bias voltage, the significantly increase in the leakage current density with voltage at low temperature is mainly the result of graphene's Fermi-energy shifts. However, the high-field saturating leakage current is observed at high temperature. This is because of the competition among the phonon and impurity scatterings. In the graphene film transferred onto the n-type Si substrate, the Femi energy level is lower and the phonon coupling is stronger, giving a stronger dependence in the carrier velocity with temperature and a weaker dependence in the leakage current density with reserve-bias voltage.

Original languageEnglish
Pages (from-to)645-650
Number of pages6
JournalSuperlattices and Microstructures
Volume88
DOIs
Publication statusPublished - 2015 Dec 1

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Graphite
Schottky diodes
Graphene
graphene
Diodes
leakage
Leakage currents
Scattering
Impurities
conduction
impurities
Bias voltage
scattering
electric potential
Current density
current density
Temperature
Fermi level
Electron energy levels
energy levels

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{d502672daa6f45cabdeebddb2f330e15,
title = "Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes",
abstract = "A correlation between the temperature-dependent leakage conduction, phonon and impurity scatterings and potential fluctuations of graphene/n-type Si Schottky diodes is identified. For applying a sufficiently high reverse-bias voltage, the significantly increase in the leakage current density with voltage at low temperature is mainly the result of graphene's Fermi-energy shifts. However, the high-field saturating leakage current is observed at high temperature. This is because of the competition among the phonon and impurity scatterings. In the graphene film transferred onto the n-type Si substrate, the Femi energy level is lower and the phonon coupling is stronger, giving a stronger dependence in the carrier velocity with temperature and a weaker dependence in the leakage current density with reserve-bias voltage.",
author = "Yow-Jon Lin",
year = "2015",
month = "12",
day = "1",
doi = "10.1016/j.spmi.2015.10.031",
language = "English",
volume = "88",
pages = "645--650",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

AU - Lin, Yow-Jon

PY - 2015/12/1

Y1 - 2015/12/1

N2 - A correlation between the temperature-dependent leakage conduction, phonon and impurity scatterings and potential fluctuations of graphene/n-type Si Schottky diodes is identified. For applying a sufficiently high reverse-bias voltage, the significantly increase in the leakage current density with voltage at low temperature is mainly the result of graphene's Fermi-energy shifts. However, the high-field saturating leakage current is observed at high temperature. This is because of the competition among the phonon and impurity scatterings. In the graphene film transferred onto the n-type Si substrate, the Femi energy level is lower and the phonon coupling is stronger, giving a stronger dependence in the carrier velocity with temperature and a weaker dependence in the leakage current density with reserve-bias voltage.

AB - A correlation between the temperature-dependent leakage conduction, phonon and impurity scatterings and potential fluctuations of graphene/n-type Si Schottky diodes is identified. For applying a sufficiently high reverse-bias voltage, the significantly increase in the leakage current density with voltage at low temperature is mainly the result of graphene's Fermi-energy shifts. However, the high-field saturating leakage current is observed at high temperature. This is because of the competition among the phonon and impurity scatterings. In the graphene film transferred onto the n-type Si substrate, the Femi energy level is lower and the phonon coupling is stronger, giving a stronger dependence in the carrier velocity with temperature and a weaker dependence in the leakage current density with reserve-bias voltage.

UR - http://www.scopus.com/inward/record.url?scp=84949489420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949489420&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2015.10.031

DO - 10.1016/j.spmi.2015.10.031

M3 - Article

AN - SCOPUS:84949489420

VL - 88

SP - 645

EP - 650

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -