Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr
                        1-x
                        O
                        2
                         (x = 0 - 0.1)

Shashi B. Singh; L. T. Yang; Y. F. Wang; Y. C. Shao; C. W. Chiang; J. W. Chiou; K. T. Lin; S. C. Chen; Bo-Yao Wang; C. H. Chuang; D. C. Ling; W. F. Pong; M. H. Tsai; H. M. Tsai; C. W. Pao; H. W. Shiu; C. H. Chen; H. J. Lin; J. F. Lee; H. Yamane; N. Kosugi

doi:10.1103/PhysRevB.86.241103

Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1)

Shashi B. Singh, L. T. Yang, Y. F. Wang, Y. C. Shao, C. W. Chiang, J. W. Chiou, K. T. Lin, S. C. Chen, Bo-Yao Wang, C. H. Chuang, D. C. Ling, W. F. Pong, M. H. Tsai, H. M. Tsai, C. W. Pao, H. W. Shiu, C. H. Chen, H. J. Lin, J. F. Lee, H. YamaneN. Kosugi

Department of Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr _1-x O ₂ (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L _3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 ⁺ to Cu2 ⁺ with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 ⁺ . These results indicate that the p-type conductivity in the CuCr _1-x O ₂ samples is enhanced by a Cu1 ⁺ -O-Cu2 ⁺ rather than a Cr3 ⁺ -Cr4 ⁺ or direct Cu1 ⁺ -Cu2 ⁺ hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

Original language	English
Article number	241103
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.86.241103
Publication status	Published - 2012 Dec 7

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.86.241103

Fingerprint Dive into the research topics of 'Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr <sub>1-x</sub> O <sub>2</sub> (x = 0 - 0.1)'. Together they form a unique fingerprint.

Cite this

Singh, S. B., Yang, L. T., Wang, Y. F., Shao, Y. C., Chiang, C. W., Chiou, J. W., Lin, K. T., Chen, S. C., Wang, B-Y., Chuang, C. H., Ling, D. C., Pong, W. F., Tsai, M. H., Tsai, H. M., Pao, C. W., Shiu, H. W., Chen, C. H., Lin, H. J., Lee, J. F., ... Kosugi, N. (2012). Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1) Physical Review B - Condensed Matter and Materials Physics, 86(24), [241103]. https://doi.org/10.1103/PhysRevB.86.241103

Singh, Shashi B. ; Yang, L. T. ; Wang, Y. F. ; Shao, Y. C. ; Chiang, C. W. ; Chiou, J. W. ; Lin, K. T. ; Chen, S. C. ; Wang, Bo-Yao ; Chuang, C. H. ; Ling, D. C. ; Pong, W. F. ; Tsai, M. H. ; Tsai, H. M. ; Pao, C. W. ; Shiu, H. W. ; Chen, C. H. ; Lin, H. J. ; Lee, J. F. ; Yamane, H. ; Kosugi, N. / Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1) In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 86, No. 24.

@article{173e7e1ed1744682a4752ed32ad30684,

title = " Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1) ",

abstract = " The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.",

author = "Singh, {Shashi B.} and Yang, {L. T.} and Wang, {Y. F.} and Shao, {Y. C.} and Chiang, {C. W.} and Chiou, {J. W.} and Lin, {K. T.} and Chen, {S. C.} and Bo-Yao Wang and Chuang, {C. H.} and Ling, {D. C.} and Pong, {W. F.} and Tsai, {M. H.} and Tsai, {H. M.} and Pao, {C. W.} and Shiu, {H. W.} and Chen, {C. H.} and Lin, {H. J.} and Lee, {J. F.} and H. Yamane and N. Kosugi",

year = "2012",

month = dec,

day = "7",

doi = "10.1103/PhysRevB.86.241103",

language = "English",

volume = "86",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "24",

}

Singh, SB, Yang, LT, Wang, YF, Shao, YC, Chiang, CW, Chiou, JW, Lin, KT, Chen, SC, Wang, B-Y, Chuang, CH, Ling, DC, Pong, WF, Tsai, MH, Tsai, HM, Pao, CW, Shiu, HW, Chen, CH, Lin, HJ, Lee, JF, Yamane, H & Kosugi, N 2012, ' Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1) ', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 24, 241103. https://doi.org/10.1103/PhysRevB.86.241103

Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1) . / Singh, Shashi B.; Yang, L. T.; Wang, Y. F.; Shao, Y. C.; Chiang, C. W.; Chiou, J. W.; Lin, K. T.; Chen, S. C.; Wang, Bo-Yao; Chuang, C. H.; Ling, D. C.; Pong, W. F.; Tsai, M. H.; Tsai, H. M.; Pao, C. W.; Shiu, H. W.; Chen, C. H.; Lin, H. J.; Lee, J. F.; Yamane, H.; Kosugi, N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 24, 241103, 07.12.2012.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1)

AU - Singh, Shashi B.

AU - Yang, L. T.

AU - Wang, Y. F.

AU - Shao, Y. C.

AU - Chiang, C. W.

AU - Chiou, J. W.

AU - Lin, K. T.

AU - Chen, S. C.

AU - Wang, Bo-Yao

AU - Chuang, C. H.

AU - Ling, D. C.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Tsai, H. M.

AU - Pao, C. W.

AU - Shiu, H. W.

AU - Chen, C. H.

AU - Lin, H. J.

AU - Lee, J. F.

AU - Yamane, H.

AU - Kosugi, N.

PY - 2012/12/7

Y1 - 2012/12/7

N2 - The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

AB - The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

UR - http://www.scopus.com/inward/record.url?scp=84871054903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871054903&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.86.241103

DO - 10.1103/PhysRevB.86.241103

M3 - Article

AN - SCOPUS:84871054903

VL - 86

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 24

M1 - 241103

ER -

Singh SB, Yang LT, Wang YF, Shao YC, Chiang CW, Chiou JW et al. Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr _1-x O ₂ (x = 0 - 0.1) Physical Review B - Condensed Matter and Materials Physics. 2012 Dec 7;86(24). 241103. https://doi.org/10.1103/PhysRevB.86.241103