Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1)

Shashi B. Singh, L. T. Yang, Y. F. Wang, Y. C. Shao, C. W. Chiang, J. W. Chiou, K. T. Lin, S. C. Chen, Bo-Yao Wang, C. H. Chuang, D. C. Ling, W. F. Pong, M. H. Tsai, H. M. Tsai, C. W. Pao, H. W. Shiu, C. H. Chen, H. J. Lin, J. F. Lee, H. Yamane & 1 others N. Kosugi

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Abstract

The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

Original languageEnglish
Article number241103
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number24
DOIs
Publication statusPublished - 2012 Dec 7

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Electronic structure
electronic structure
valence
x ray absorption
X rays
conductivity
conduction
Emission spectroscopy
Photoelectrons
Valence bands
Fermi level
crossovers
Microscopic examination
photoelectrons
microscopy
Scanning
scanning
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Singh, Shashi B. ; Yang, L. T. ; Wang, Y. F. ; Shao, Y. C. ; Chiang, C. W. ; Chiou, J. W. ; Lin, K. T. ; Chen, S. C. ; Wang, Bo-Yao ; Chuang, C. H. ; Ling, D. C. ; Pong, W. F. ; Tsai, M. H. ; Tsai, H. M. ; Pao, C. W. ; Shiu, H. W. ; Chen, C. H. ; Lin, H. J. ; Lee, J. F. ; Yamane, H. ; Kosugi, N. / Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1) In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 86, No. 24.
@article{173e7e1ed1744682a4752ed32ad30684,
title = "Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1)",
abstract = "The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.",
author = "Singh, {Shashi B.} and Yang, {L. T.} and Wang, {Y. F.} and Shao, {Y. C.} and Chiang, {C. W.} and Chiou, {J. W.} and Lin, {K. T.} and Chen, {S. C.} and Bo-Yao Wang and Chuang, {C. H.} and Ling, {D. C.} and Pong, {W. F.} and Tsai, {M. H.} and Tsai, {H. M.} and Pao, {C. W.} and Shiu, {H. W.} and Chen, {C. H.} and Lin, {H. J.} and Lee, {J. F.} and H. Yamane and N. Kosugi",
year = "2012",
month = "12",
day = "7",
doi = "10.1103/PhysRevB.86.241103",
language = "English",
volume = "86",
journal = "Physical Review B-Condensed Matter",
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Singh, SB, Yang, LT, Wang, YF, Shao, YC, Chiang, CW, Chiou, JW, Lin, KT, Chen, SC, Wang, B-Y, Chuang, CH, Ling, DC, Pong, WF, Tsai, MH, Tsai, HM, Pao, CW, Shiu, HW, Chen, CH, Lin, HJ, Lee, JF, Yamane, H & Kosugi, N 2012, ' Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1) ', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 24, 241103. https://doi.org/10.1103/PhysRevB.86.241103

Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1) . / Singh, Shashi B.; Yang, L. T.; Wang, Y. F.; Shao, Y. C.; Chiang, C. W.; Chiou, J. W.; Lin, K. T.; Chen, S. C.; Wang, Bo-Yao; Chuang, C. H.; Ling, D. C.; Pong, W. F.; Tsai, M. H.; Tsai, H. M.; Pao, C. W.; Shiu, H. W.; Chen, C. H.; Lin, H. J.; Lee, J. F.; Yamane, H.; Kosugi, N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 24, 241103, 07.12.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr 1-x O 2 (x = 0 - 0.1)

AU - Singh, Shashi B.

AU - Yang, L. T.

AU - Wang, Y. F.

AU - Shao, Y. C.

AU - Chiang, C. W.

AU - Chiou, J. W.

AU - Lin, K. T.

AU - Chen, S. C.

AU - Wang, Bo-Yao

AU - Chuang, C. H.

AU - Ling, D. C.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Tsai, H. M.

AU - Pao, C. W.

AU - Shiu, H. W.

AU - Chen, C. H.

AU - Lin, H. J.

AU - Lee, J. F.

AU - Yamane, H.

AU - Kosugi, N.

PY - 2012/12/7

Y1 - 2012/12/7

N2 - The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

AB - The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr 1-x O 2 (x=0-0.1) compounds was investigated using O K-, Cu, and Cr L 3,2 -edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1 + to Cu2 + with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3 + . These results indicate that the p-type conductivity in the CuCr 1-x O 2 samples is enhanced by a Cu1 + -O-Cu2 + rather than a Cr3 + -Cr4 + or direct Cu1 + -Cu2 + hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.

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U2 - 10.1103/PhysRevB.86.241103

DO - 10.1103/PhysRevB.86.241103

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JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

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