Abstract
The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
| Original language | English |
|---|---|
| Pages (from-to) | 103-108 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 121 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2015 Oct 13 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
Cite this
}
Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes. / Lin, Yow Jon; Ruan, Cheng He; Chu, Yu Ju; Liu, Chia Jyi; Lin, Fei Hung.
In: Applied Physics A: Materials Science and Processing, Vol. 121, No. 1, 13.10.2015, p. 103-108.Research output: Contribution to journal › Article
TY - JOUR
T1 - Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes
AU - Lin, Yow Jon
AU - Ruan, Cheng He
AU - Chu, Yu Ju
AU - Liu, Chia Jyi
AU - Lin, Fei Hung
PY - 2015/10/13
Y1 - 2015/10/13
N2 - The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
AB - The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
UR - http://www.scopus.com/inward/record.url?scp=84941315114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84941315114&partnerID=8YFLogxK
U2 - 10.1007/s00339-015-9390-y
DO - 10.1007/s00339-015-9390-y
M3 - Article
AN - SCOPUS:84941315114
VL - 121
SP - 103
EP - 108
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -