TY - JOUR
T1 - Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes
AU - Lin, Yow Jon
AU - Ruan, Cheng He
AU - Chu, Yu Ju
AU - Liu, Chia Jyi
AU - Lin, Fei Hung
PY - 2015/10/13
Y1 - 2015/10/13
N2 - The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
AB - The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
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U2 - 10.1007/s00339-015-9390-y
DO - 10.1007/s00339-015-9390-y
M3 - Article
AN - SCOPUS:84941315114
VL - 121
SP - 103
EP - 108
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -