Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes

Yow Jon Lin, Cheng He Ruan, Yu Ju Chu, Chia Jyi Liu, Fei Hung Lin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

Original languageEnglish
Pages (from-to)103-108
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume121
Issue number1
DOIs
Publication statusPublished - 2015 Oct 13

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Diodes
Sulfides
Thermionic emission
Photocurrents
Passivation
Temperature
Heterojunctions
Cu2ZnSnS4

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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abstract = "The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.",
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Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes. / Lin, Yow Jon; Ruan, Cheng He; Chu, Yu Ju; Liu, Chia Jyi; Lin, Fei Hung.

In: Applied Physics A: Materials Science and Processing, Vol. 121, No. 1, 13.10.2015, p. 103-108.

Research output: Contribution to journalArticle

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AU - Ruan, Cheng He

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AU - Liu, Chia Jyi

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AB - The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

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