Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method

Shang Min Chen, Yow-Jon Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Si[sbnd]O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or “seeds”) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalJournal of Crystal Growth
Volume481
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Silicon
Nanowires
Heterojunctions
heterojunctions
Chemical vapor deposition
nanowires
Nucleation
vapor deposition
nucleation
flakes
silicon
optoelectronic devices
mass ratios
Optoelectronic devices
Surface morphology
Seed
seeds
Hydrogen
Semiconductor materials
catalysts

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{6fc59d3dd2064c6a90a819c32d007c50,
title = "Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method",
abstract = "In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Si[sbnd]O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or “seeds”) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.",
author = "Chen, {Shang Min} and Yow-Jon Lin",
year = "2018",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2017.10.028",
language = "English",
volume = "481",
pages = "18--22",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method. / Chen, Shang Min; Lin, Yow-Jon.

In: Journal of Crystal Growth, Vol. 481, 01.01.2018, p. 18-22.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method

AU - Chen, Shang Min

AU - Lin, Yow-Jon

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Si[sbnd]O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or “seeds”) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

AB - In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Si[sbnd]O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or “seeds”) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85032275182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032275182&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2017.10.028

DO - 10.1016/j.jcrysgro.2017.10.028

M3 - Article

AN - SCOPUS:85032275182

VL - 481

SP - 18

EP - 22

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -