Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen, C. T. Chao, C. Y. Kuo, Lance Horng, Teho Wu, G. Chern, C. Y. Huang, S. Isogami, M. Tsunoda, M. Takahashi, Jong-Ching Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

Original languageEnglish
Pages (from-to)2824-2826
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

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Tunnel junctions
Magnetoresistance
Tunnelling magnetoresistance
Magnetization reversal
Magnetization
Magnetic fields
Data storage equipment
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, C. C. ; Chao, C. T. ; Kuo, C. Y. ; Horng, Lance ; Wu, Teho ; Chern, G. ; Huang, C. Y. ; Isogami, S. ; Tsunoda, M. ; Takahashi, M. ; Wu, Jong-Ching. / Controllable remanent states on microstructured magnetic tunnel junction rings. In: IEEE Transactions on Magnetics. 2007 ; Vol. 43, No. 6. pp. 2824-2826.
@article{59fd07c8571b4aa5932f71adc8e1a568,
title = "Controllable remanent states on microstructured magnetic tunnel junction rings",
abstract = "Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.",
author = "Chen, {C. C.} and Chao, {C. T.} and Kuo, {C. Y.} and Lance Horng and Teho Wu and G. Chern and Huang, {C. Y.} and S. Isogami and M. Tsunoda and M. Takahashi and Jong-Ching Wu",
year = "2007",
month = "6",
day = "1",
doi = "10.1109/TMAG.2007.894206",
language = "English",
volume = "43",
pages = "2824--2826",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Chen, CC, Chao, CT, Kuo, CY, Horng, L, Wu, T, Chern, G, Huang, CY, Isogami, S, Tsunoda, M, Takahashi, M & Wu, J-C 2007, 'Controllable remanent states on microstructured magnetic tunnel junction rings', IEEE Transactions on Magnetics, vol. 43, no. 6, pp. 2824-2826. https://doi.org/10.1109/TMAG.2007.894206

Controllable remanent states on microstructured magnetic tunnel junction rings. / Chen, C. C.; Chao, C. T.; Kuo, C. Y.; Horng, Lance; Wu, Teho; Chern, G.; Huang, C. Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Wu, Jong-Ching.

In: IEEE Transactions on Magnetics, Vol. 43, No. 6, 01.06.2007, p. 2824-2826.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Controllable remanent states on microstructured magnetic tunnel junction rings

AU - Chen, C. C.

AU - Chao, C. T.

AU - Kuo, C. Y.

AU - Horng, Lance

AU - Wu, Teho

AU - Chern, G.

AU - Huang, C. Y.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Wu, Jong-Ching

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

AB - Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

UR - http://www.scopus.com/inward/record.url?scp=34249090720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249090720&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2007.894206

DO - 10.1109/TMAG.2007.894206

M3 - Article

AN - SCOPUS:34249090720

VL - 43

SP - 2824

EP - 2826

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 6

ER -