Control and detection of organosilane polarization on nanowire field-effect transistors

M. C. Lin, C. J. Chu, L. C. Tsai, H. Y. Lin, C. S. Wu, Y. P. Wu, Y. N. Wu, D. B. Shieh, Y. W. Su, C. D. Chen

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49 Citations (Scopus)

Abstract

We demonstrated control and detection of UV-induced 3- aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.

Original languageEnglish
Pages (from-to)3656-3661
Number of pages6
JournalNano Letters
Volume7
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Lin, M. C., Chu, C. J., Tsai, L. C., Lin, H. Y., Wu, C. S., Wu, Y. P., Wu, Y. N., Shieh, D. B., Su, Y. W., & Chen, C. D. (2007). Control and detection of organosilane polarization on nanowire field-effect transistors. Nano Letters, 7(12), 3656-3661. https://doi.org/10.1021/nl0719170