Abstract
We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 533-536 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 107 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1998 Jul 29 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Lin, D. Y., Huang, Y. S., Chen, Y. F., & Tiong, K. K. (1998). Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface. Solid State Communications, 107(10), 533-536. https://doi.org/10.1016/S0038-1098(98)00274-9