Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

D. Y. Lin, Y. S. Huang, Y. F. Chen, K. K. Tiong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

Original languageEnglish
Pages (from-to)533-536
Number of pages4
JournalSolid State Communications
Volume107
Issue number10
DOIs
Publication statusPublished - 1998 Jul 29

Fingerprint

Two dimensional electron gas
electron gas
Heterojunctions
heterojunctions
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Substrates
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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abstract = "We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.",
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Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface. / Lin, D. Y.; Huang, Y. S.; Chen, Y. F.; Tiong, K. K.

In: Solid State Communications, Vol. 107, No. 10, 29.07.1998, p. 533-536.

Research output: Contribution to journalArticle

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AU - Lin, D. Y.

AU - Huang, Y. S.

AU - Chen, Y. F.

AU - Tiong, K. K.

PY - 1998/7/29

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N2 - We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

AB - We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

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