Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

D. Y. Lin; Y. S. Huang; Y. F. Chen; K. K. Tiong

doi:10.1016/S0038-1098(98)00274-9

Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

D. Y. Lin, Y. S. Huang, Y. F. Chen, K. K. Tiong

Department of Electronic Engineering

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

Original language	English
Pages (from-to)	533-536
Number of pages	4
Journal	Solid State Communications
Volume	107
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1098(98)00274-9
Publication status	Published - 1998 Jul 29

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface",

abstract = "We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.",

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T1 - Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

AU - Lin, D. Y.

AU - Huang, Y. S.

AU - Chen, Y. F.

AU - Tiong, K. K.

PY - 1998/7/29

Y1 - 1998/7/29

N2 - We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

AB - We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.

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U2 - 10.1016/S0038-1098(98)00274-9

DO - 10.1016/S0038-1098(98)00274-9

M3 - Article

AN - SCOPUS:0032120774

VL - 107

SP - 533

EP - 536

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 10

ER -