Abstract
We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/ AlGaN heterojunction are observed and the origin and nature of these features are discussed.
Original language | English |
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Pages (from-to) | 533-536 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 107 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1998 Jul 29 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry